Stacked Semiconductor Package Gap-Fill Structure for CMP Flatness
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Solution Overview
Problem
Existing semiconductor packages face challenges in achieving high capacity and multifunctionality while maintaining process stability, particularly when stacking semiconductor chips, due to limitations in ensuring flatness and stability during fabrication processes.
Innovation Solution
A semiconductor package design that includes a first semiconductor chip with a first bonding layer, a second semiconductor chip bonded to the first bonding layer, and a chip through via penetrating the second semiconductor substrate, along with a passivation film and multiple gap fill films comprising inorganic and organic filling films, which are sequentially stacked to enhance stability and flatness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If semiconductor chips are stacked to increase capacity and multifunctionality, then the package capacity and functionality are improved, but process stability and flatness control deteriorate
Solution Approach 1:
The gap fill film is divided into multiple layers including an inorganic filling film and an organic filling film, each serving specific functions to maintain flatness and stability during the stacking process
Solution Approach 2:
The gap fill film comprises a composite structure of inorganic and organic materials, where the inorganic filling film provides erosion resistance and the organic filling film provides flatness, combining the advantages of both material types to resolve the contradiction between stacking capability and process stability
2Manufacturing precision
If multiple gap fill films are stacked to ensure flatness, then flatness and process stability are improved, but device complexity increases
Solution Approach 1:
Different regions of the gap fill structure have different material compositions - the inorganic filling film is positioned where erosion resistance is needed, while the organic filling film is positioned where flatness is critical, optimizing performance locally rather than using a uniform structure throughout
Data Source
AI summary
A semiconductor package includes a first semiconductor chip, which includes a first semiconductor substrate and a first bonding layer on the first semiconductor substrate. A second semiconductor chip includes a second semiconductor substrate, a second bonding layer bonded to the first bonding layer, and a chip-through-via which penetrates the second semiconductor substrate and is connected to the second bonding layer. A passivation film extends along an upper side of the second semiconductor chip and does not extend along side-faces of the second semiconductor chip. The chip-through-via penetrates the passivation film. A multiple-gap-fill film extends along the upper side of the first semiconductor chip, the side faces of the second semiconductor chip, and the side faces of the passivation film. The multiple-gap-fill films includes an inorganic filling film and an organic filling film which are sequentially stacked on the first semiconductor chip.