Stacked Semiconductor Package With Heat-Bypass Electrode Layout
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Solution Overview
Problem
In semiconductor packages with densely disposed through-electrodes, hotspots form due to high-speed communication, leading to increased thermal resistance and performance deterioration.
Innovation Solution
A semiconductor package design incorporating a dummy chip with a cool zone between the first and second semiconductor chips, along with a thermal barrier layer, to redirect heat flow and reduce temperature in the hot zones, thereby improving heat dissipation and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If through electrodes are densely disposed to enable high-speed communication in stacked semiconductor chips, then communication performance is improved, but hotspots are formed leading to temperature increase and performance deterioration
Solution Approach 1:
A dummy chip is introduced as an intermediary component between the first and second semiconductor chips. This dummy chip includes a cool zone that acts as a thermal barrier, intercepting heat flow from the first hot zone before it reaches the second hot zone. The dummy chip serves as a mediator that redirects heat pathways without interfering with the electrical connection between through electrodes, thus maintaining communication performance while reducing hotspot temperatures.
Solution Approach 2:
The stacking structure is segmented by inserting a dummy chip with distinct functional zones (cool zone) between the active semiconductor chips. This segmentation divides the thermal pathways, creating separate heat management regions. The cool zone in the dummy chip segments the direct vertical heat flow, forcing heat to bypass through alternative pathways that do not concentrate in the second hot zone, thereby reducing temperature accumulation.
2Temperature
If a dummy chip with cool zone is inserted between semiconductor chips to reduce hotspot temperature, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The dummy chip is designed to perform multiple functions simultaneously: it provides electrical connection continuity through its through electrodes, creates thermal management zones (cool zone) to redirect heat flow, and maintains mechanical support for the stacked structure. By making the dummy chip multi-functional, the need for separate dedicated thermal management components is eliminated, thus reducing overall device complexity while achieving heat dissipation improvement.
Solution Approach 2:
The electrical connection function and thermal management function are merged into a single dummy chip component. The through electrodes of the dummy chip serve both to conduct electricity between chips and to define thermal pathways through their positioning. The cool zone is integrated within the dummy chip structure rather than being a separate component, combining multiple functions into one element to minimize structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively disperses heat from the hot zones to surrounding regions, enhancing thermal dissipation properties and reliability of the semiconductor package by preventing temperature rise in the second semiconductor chips.
Implementation Method 1
a first thermal barrier layer disposed between the first hot zone and the cool zone
Implementation Method 2
first heat redistribution through electrodes disposed outside of an outer boundary of the cool zone and electrically connected to the first through electrodes
Data Source
AI summary
A semiconductor package includes a first semiconductor chip including first through electrodes and having a first hot zone in which the first through electrodes are disposed; a heat redistribution chip disposed on the first semiconductor chip, having a cool zone overlapping the first hot zone in a stacking direction with respect to the first semiconductor chip, and including first heat redistribution through electrodes disposed outside of an outer boundary of the cool zone and electrically connected to the first through electrodes, respectively; a second semiconductor chip disposed on the heat redistribution chip, having a second hot zone overlapping the cool zone in the stacking direction, and including second through electrodes disposed in the second hot zone and electrically connected to the first heat redistribution through electrodes, respectively; and a first thermal barrier layer disposed between the first hot zone and the cool zone, wherein the first through electrodes are electrically connected to the second through electrodes by bypassing the cool zone via the first heat redistribution through electrodes.


