Stacked Semiconductor Package With Nanocomposite Dielectric Heat Path
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Solution Overview
Problem
Existing semiconductor packages face challenges in achieving high performance, high capacity, and miniaturization while maintaining reliability and simplifying manufacturing processes.
Innovation Solution
A semiconductor package design that includes a first semiconductor chip, a second semiconductor chip stacked vertically with through-electrodes, a dielectric layer made of a nanocomposite of inorganic particles and polymer chains, and bump structures electrically connected to the through-electrodes, which improves heat conduction and self-healing properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional dielectric layer is used in semiconductor packages, then the manufacturing process is simpler, but the heat dissipation performance is insufficient
Solution Approach 1:
The dielectric layer is constructed as a nanocomposite material combining inorganic particles (such as aluminum oxide, aluminum nitride, or silicon carbide) with organic polymer matrix. This composite structure provides enhanced thermal conductivity while maintaining dielectric properties, resolving the contradiction between heat dissipation performance and manufacturing simplicity.
Solution Approach 2:
The patent modifies the thermal conductivity parameter of the dielectric layer by incorporating inorganic particles with high thermal conductivity into the polymer matrix. This parameter change enables improved heat dissipation without fundamentally altering the spin-coating manufacturing process, thus balancing performance improvement with manufacturing ease.
2Productivity
If semiconductor chips are stacked vertically with through-electrodes to achieve miniaturization, then the device capacity increases, but the reliability and heat management become more difficult
Solution Approach 1:
The nanocomposite dielectric layer with high thermal conductivity inorganic particles embedded in polymer matrix provides superior heat management capabilities in vertically stacked semiconductor packages. The composite structure efficiently conducts heat away from the stacked chips and through-electrodes, maintaining reliability while enabling high-density vertical stacking for increased device capacity.
3Reliability
If a nanocomposite dielectric layer with inorganic particles and polymer chains is used, then the thermal conductivity and self-healing properties are improved, but the manufacturing precision requirements increase
Solution Approach 1:
The polymer matrix in the nanocomposite dielectric layer provides self-healing capabilities that automatically repair minor defects and cracks formed during manufacturing or operation. This self-service property compensates for variations in manufacturing precision, maintaining high reliability without requiring extremely tight process control.
Solution Approach 2:
The patent utilizes the viscoelastic properties and curing characteristics of the polymer matrix to accommodate nanocomposite formation. By controlling the curing process parameters, the material can flow to fill voids and then solidify to provide structural integrity, reducing the impact of manufacturing precision variations on final product quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed semiconductor package achieves improved heat dissipation and reliability due to the nanocomposite dielectric layer's enhanced thermal conductivity and self-healing capabilities, while simplifying manufacturing processes.
Implementation Method 1
The dielectric layer includes inorganic particles, and polymer chains bonded to at least one sides of the respective inorganic particles and connected toward the inner surface and the outer surface via the inorganic particles
Data Source
AI summary
A semiconductor package includes a first semiconductor chip including first pads, a second semiconductor chip including second pads in contact with the first pads, and through-electrodes electrically connected to the second pads and extending to a rear surface opposite to the front surface, a dielectric layer covering at least portions of the respective first and second semiconductor chips and having an inner surface facing the first and second semiconductor chips and an outer surface opposite the inner surface, and bump structures on a portion of the outer surface of the dielectric layer and electrically connected to the through-electrodes. The dielectric layer includes inorganic particles, and polymer chains bonded to at least one sides of the respective inorganic particles and connected toward the inner surface and the outer surface via the inorganic particles.