Stacked Semiconductor Package Layout for Vertical Heat Dissipation
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Solution Overview
Problem
Semiconductor packages face challenges in achieving effective heat dissipation in a vertical direction, which is crucial for reducing thermal resistance and improving performance in densely packed electronic devices.
Innovation Solution
The semiconductor package design incorporates a stacked configuration of semiconductor chips with specific pad groups and connection terminals, where the second metal layer is thicker than the first, allowing for efficient heat transfer through strategically placed connection terminals and pad groups, enhancing upward heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor chips are vertically stacked to reduce device size, then device compactness is improved, but heat dissipation efficiency deteriorates
Solution Approach 1:
The invention divides the heat dissipation function into multiple segments by creating separate pad groups (first, second, and third pad groups) that connect to different metal layers. This segmentation allows heat to be dissipated through multiple parallel pathways, improving overall heat dissipation efficiency while maintaining the vertically stacked compact structure.
Solution Approach 2:
The invention transitions from planar heat dissipation to three-dimensional heat dissipation by utilizing vertically stacked metal layers (first metal layer, second metal layer, third metal layer) with different thicknesses. The second metal layer is specifically designed to be thicker to provide enhanced heat dissipation capacity in the vertical dimension, allowing heat to escape through multiple levels rather than a single plane.
2Reliability
If connection terminals are increased to improve electrical connectivity, then electrical connection reliability is improved, but device complexity increases
Solution Approach 1:
The invention makes the pad groups multi-functional by designing them to serve both electrical connection purposes and heat dissipation purposes simultaneously. The first, second, and third pad groups not only establish electrical connections between stacked chips but also act as heat dissipation structures by connecting to metal layers of varying thicknesses, thereby reducing device complexity while improving reliability.
Solution Approach 2:
The invention merges the electrical connection function and heat dissipation function into a unified structure. The connection terminals (pad groups) are designed to perform dual functions: establishing electrical connectivity between chips and serving as heat dissipation pathways by connecting to the multi-layer metal structure, thereby reducing the need for separate components and simplifying the overall device structure.
3Temperature
If metal layer thickness is increased to improve heat transfer, then heat conduction is improved, but manufacturing precision requirements increase
Solution Approach 1:
The invention applies local quality by making the second metal layer thicker than the first and third metal layers. This localized thickness variation is strategically applied only where needed for heat dissipation (in the regions corresponding to the second pad group) rather than uniformly increasing all metal layer thicknesses, thereby improving heat transfer efficiency while minimizing the impact on manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces thermal resistance and improves heat transfer efficiency in the vertical direction, addressing the need for enhanced heat dissipation in compact electronic devices.
Implementation Method 1
The second metal layer may be thicker than the first metal layer. The first pad group and the second pad group may be in contact with the second metal layer... This design effectively reduces thermal resistance and improves heat transfer efficiency in the vertical direction
Data Source
AI summary
A semiconductor package may include vertically-stacked semiconductor chips and first, second, and third connection terminals connecting the semiconductor chips to each other. Each of the semiconductor chips may include a semiconductor substrate, an interconnection layer on the semiconductor substrate, penetration electrodes connected to the interconnection layer through the semiconductor substrate, and first, second, and third groups on the interconnection layer. The interconnection layer may include an insulating layer and first and second metal layers in the insulating layer. The first and second groups may be in contact with the second metal layer, and the third group may be spaced apart from the second metal layer. Each of the first and third groups may include pads connected to a corresponding one of the first and third connection terminals in a many-to-one manner. The second group may include pads connected to the second connection terminal in a one-to-one manner.