Stacked Parallel Transistor Structure for Lower Resistive Heating
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Solution Overview
Problem
Large-current transistors face challenges with resistive heating, which limits their performance due to uneven current distribution and extensive interfaces that increase local heating and material breakdown.
Innovation Solution
A multi-component transistor structure is proposed, comprising components electrically connected in parallel, with each component having transistor elements and connection resistances. The connection resistances are designed to be less than the transistor element resistances, and the components are stacked with some components disposed directly on others, optimizing heat management and electrical efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If an extensive interface between source and drain portions is provided to reduce current density, then local heating and material breakdown are reduced, but resistive heating increases due to the extensive interface length
Solution Approach 1:
The transistor structure is divided into multiple discrete components (first transistor component, second transistor component, third transistor component) connected in parallel. Each component has its own source-drain interface, and the component connections provide alternative current paths with reduced resistance. This segmentation allows the current to be distributed across multiple interfaces while reducing the total resistive heating through the component connections.
2Reliability
If source and drain materials are used that are not perfectly conductive, then material breakdown is reduced, but current distribution becomes uneven with greater current density near external connections
Solution Approach 1:
Component connections are introduced as intermediary elements between the transistor components. These connections have resistance values that are less than the transistor element resistances, serving as low-resistance pathways that facilitate more uniform current distribution across the parallel-connected transistor components, thereby improving current distribution uniformity while maintaining material reliability.
3Power
If multiple power transistors are connected in parallel to handle large currents, then current handling capability increases, but resistive heating of the transistor system increases
Solution Approach 1:
The power transistor system is segmented into multiple discrete transistor components connected in parallel. Each component handles a portion of the total current, and the component connections provide low-resistance interconnections between components. This segmentation enables the system to handle larger total currents while reducing overall resistive heating compared to a single large transistor, as the current is distributed across multiple lower-resistance paths.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces resistive heating, improves current distribution, and enhances the overall performance of large-current transistors by distributing electrical current more evenly and reducing maximum current density.
Implementation Method 1
each is electrically connected to respective transistor elements of the components. The connection resistance is less than, less than an average of, or less than a sum of the transistor element resistances
Implementation Method 2
resistive heating in the transistor materials, including resistive heating in the gate, the source, and the drain of the transistor. The extensive interface between source and drain portions of a power transistor requires that electrical current physically travels along the interface, creating resistive heat
Data Source
AI summary
A multi-component transistor structure includes components each comprising an individual, discrete, and separate component substrate and a component transistor. The component transistor includes a transistor element having a transistor element resistance. A component connection is disposed external to the transistor element and has a connection resistance. The component connection electrically connects the transistor elements in the components in parallel. The connection resistance is less than the transistor element resistance of at least one corresponding transistor element, less than an average of the transistor element resistances of all of the corresponding transistor elements, or less than the sum of all of the transistor element resistances of all of the corresponding transistor elements. The component transistors are functionally similar and at least one of the components is disposed on another different one of the components in a component stack.