Stacked Pixel CMOS Image Sensor Vertical Color Sensing
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Solution Overview
Problem
Conventional CMOS image sensors require light-absorbing color filters to sense colors, which leads to reduced sensitivity and resolution due to light absorption and the need for complex pixel structures with multiple transistors, making it challenging to achieve high-resolution, low-noise imaging without sacrificing sensitivity.
Innovation Solution
The implementation of stacked photo-sites with a potential barrier under the pinned photodiode structure allows for vertical separation of photo-generated carriers, enabling color sensing without conventional light-absorbing filters, thereby reducing noise and maintaining sensitivity, and allowing for higher pixel density and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional light-absorbing color filters are used to sense colors, then color sensing capability is achieved, but sensitivity and resolution are reduced due to light absorption
Solution Approach 1:
The patent transitions from planar color filtering to three-dimensional stacked photodiodes, where different wavelengths are detected at different depths vertically. This dimensional change eliminates the need for light-absorbing filters while maintaining color sensing capability through depth-based wavelength discrimination.
Solution Approach 2:
The pixel is divided into multiple stacked photodiodes, each detecting different wavelength ranges. This segmentation of the detection function across vertical layers enables color sensing without requiring light-absorbing filters, thereby preserving sensitivity.
2Adaptability or versatility
If conventional light-absorbing color filters are used to sense colors, then color sensing capability is achieved, but resolution is reduced
Solution Approach 1:
By stacking photodiodes vertically at the same pixel location, the patent enables multiple color measurements without requiring spatial separation of color filter pixels. This eliminates the resolution loss inherent in Bayer filter patterns while maintaining full color sensing capability.
3Reliability
If multiple transistors are used in pixel structure for noise reduction, then noise performance is improved, but device complexity increases
Solution Approach 1:
The patent extracts the color filtering function from the optical path and relocates it to the vertical stacking architecture of photodiodes. This eliminates the need for complex color filter arrays and associated interpolation circuits, simplifying the overall system while maintaining color sensing capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the generation of two or more color-coded signals without light-absorbing filters, improving sensitivity and resolution while simplifying the pixel structure, allowing for high-performance imaging with small pixel sizes and reduced noise.
Implementation Method 1
Typical image sensors sense light by converting impinging photons into electrons that are integrated (collected) in sensor pixels
Implementation Method 2
a potential barrier formed between the first region and a second region underneath the first region and diverting the photo-generated carriers from the second region to the second charge storage region
Data Source
AI summary
Provided is a solid-state CMOS image sensor, specifically a CMOS image sensor pixel that has stacked photo-sites, high sensitivity, and low dark current. In an image sensor including an array of pixels, each pixel includes: a standard photo-sensing and charge storage region formed in a first region under a surface portion of a substrate and collecting photo-generated carriers; a second charge storage region formed adjacent to the surface portion of the substrate and separated from the standard photo-sensing and charge storage region; and a potential barrier formed between the first region and a second region underneath the first region and diverting the photo-generated carriers from the second region to the second charge storage region.


