Stacked Dual-Wavelength Pixel Layout for 2D and Depth Imaging
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Solution Overview
Problem
Existing image acquisition devices face challenges in integrating depth pixels effectively within a pixel array, necessitating improved integration of depth pixels in image sensors to enhance 2D and depth image acquisition.
Innovation Solution
The image sensor is designed with a semiconductor substrate containing photosites that include first and second photosensitive areas capturing different wavelength ranges, vertical and horizontal transfer gates for charge transfer, and a control circuit to alternately apply potentials for charge transfer, facilitating the integration of depth pixels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If depth pixels are integrated into the pixel array, then the capability to acquire depth images is improved, but the device complexity increases due to multiple photosensitive areas and transfer gates
Solution Approach 1:
The patent merges 2D image pixels and depth pixels into a single integrated pixel array, where each pixel location contains both a first photosensitive area (for 2D imaging) and a second photosensitive area (for depth imaging). This consolidation allows the sensor to acquire both 2D and depth images simultaneously without requiring separate sensor modules, thereby improving versatility while managing device complexity through unified architecture.
Solution Approach 2:
Each pixel in the array is designed with dual functionality: the first photosensitive area captures visible light for 2D imaging, while the second photosensitive area captures infrared light for depth imaging. This multi-functional design enables a single pixel structure to perform multiple imaging tasks, enhancing adaptability without proportionally increasing complexity.
2Adaptability or versatility
If multiple photosensitive areas are stacked vertically, then the integration of depth pixels is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The patent implements a stacked architecture where the second photosensitive area is vertically positioned directly above the first photosensitive area within each pixel location. This nested arrangement, with the deeper second photosensitive area capturing infrared light and the shallower first photosensitive area capturing visible light, enables efficient vertical integration. The nested structure maximizes space utilization and facilitates pixel integration while managing manufacturing precision through established stacked sensor fabrication techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design allows for simultaneous acquisition of 2D and depth images by effectively integrating depth pixels, enhancing image sensor performance and resolution.
Implementation Method 1
a first photosensitive area formed in the semiconductor substrate and adapted to capturing light in a first wavelength range
Implementation Method 2
a second photosensitive area formed in the semiconductor substrate vertically in line with the first photosensitive area and adapted to capturing light in a second wavelength range, different from the first wavelength range
Data Source
AI summary
A plurality of photosites each photosite including: a first photosensitive area formed in the semiconductor substrate that captures light in a first wavelength range; a second photosensitive area formed in the semiconductor substrate vertically in line with the first photosensitive area that captures light in a second wavelength range, different from the first wavelength range; a first area of collection of charges photogenerated in the first and second photosensitive areas, arranged on the side of a surface of the substrate opposite to the first photosensitive area; a first transfer gate vertically extending from the first photosensitive area to said surface, that transfers the charges photogenerated in the first photosensitive area to the second photosensitive area; and a second transfer gate, horizontally extending on said surface vertically in line with the second photosensitive area, that transfers the photogenerated charges from the second photosensitive area to the first charge collection area.