Stacked Power Module Layout for Low Parasitic Inductance
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Solution Overview
Problem
The integration of multiple power transistors in a power module leads to a complex structure with increased parasitic inductance, which induces high voltage stress and can damage the transistors, reducing the module's reliability, especially with faster turn-on and turn-off speeds.
Innovation Solution
The power module design includes a first and second conductive plate with power transistors connected through these plates, reducing the current path length and parasitic inductance, and incorporates insulation layers and conductive pillars to prevent short circuits and optimize layout, while using a stacked terminal configuration to minimize size and thermal coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple power transistors are integrated in a power module, then high integration and high power output are achieved, but parasitic inductance increases and voltage stress damages the transistors
Solution Approach 1:
The patent transitions from planar wiring to three-dimensional stacked conductive plates, allowing current paths to extend in the vertical dimension. This reduces parasitic inductance by creating shorter, more direct current paths between transistors while maintaining high integration density through vertical stacking of power transistors and conductive plates.
Solution Approach 2:
The patent merges multiple functions into the conductive plates: they serve as electrical interconnects, heat dissipation paths, and structural support elements. The conductive plates are integrated directly with the power transistors through bonding, eliminating the need for separate wiring layers and reducing overall parasitic inductance.
2Ease of manufacture
If bonding wire is used to connect power transistors, then ease of manufacture is improved, but current path length increases and parasitic inductance increases
Solution Approach 1:
The patent extracts the interconnect function from traditional bonding wires and implements it through integrated conductive plates that are directly bonded to the power transistor electrodes. This eliminates the need for long, curved bonding wires and creates direct, short current paths while maintaining manufacturing feasibility through established bonding processes.
3Volume of moving object
If stacked terminal configuration is used, then module size is reduced, but thermal management challenges increase
Solution Approach 1:
The conductive plates perform multiple functions simultaneously: they provide electrical interconnection between power transistors, serve as heat dissipation pathways conducting thermal energy away from active devices, and provide mechanical support for the stacked structure. This multi-functionality enables compact design without compromising thermal management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces parasitic inductance, minimizes voltage stress on transistors, enhances reliability, and optimizes the power module's structure for smaller size and improved thermal management.
Implementation Method 1
the second electrode of the first power transistor is electrically connected to the first electrode of the second power transistor through the second conductive plate. In this case, most of the current flows between a joint between the second electrode of the first power transistor and the second conductive plate and a joint between the first electrode of the second power transistor and the second conductive plate
Implementation Method 2
The third terminal is located on a side that is of the first conductive plate and that faces the second conductive plate, and is insulated from the second conductive plate
Data Source
AI summary
A power module includes a first conductive plate, a second conductive plate, a third terminal, a first power transistor, and a second power transistor. A part of the first conductive plate serves as a first terminal. The second conductive plate is stacked with the first conductive plate. The third terminal is stacked with the first terminal. The first power transistor is disposed between the first conductive plate and the second conductive plate. A first electrode of the first power transistor is electrically connected to the first conductive plate, and a second electrode of the first power transistor is electrically connected to the second conductive plate. A first electrode of the second power transistor is electrically connected to the second conductive plate, and a second electrode of the second power transistor is electrically connected to the third terminal.