Stacked Power Conversion Unit Layout for Common Mode Noise Reduction
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Solution Overview
Problem
The existing power conversion units face issues with size increase and cost due to the installation of common mode reactors or hollow cores to reduce common mode noise in gate drive cables, which are necessary to mitigate noise but lead to increased dimensions and expenses.
Innovation Solution
A power conversion unit design featuring multiple semiconductor modules, a gate drive circuit, and substrates arranged in a stacked configuration, eliminating the need for connecting wires between semiconductor modules and gate drive circuits, thereby reducing noise without requiring additional noise-reducing components like common mode reactors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a common mode reactor or hollow core is inserted in the gate drive cable to reduce common mode noise, then noise reduction is achieved, but device size and manufacturing cost increase
Solution Approach 1:
The invention extracts and eliminates the gate drive cable that causes common mode noise by implementing direct mounting of the gate drive circuit on the substrate where semiconductor devices are mounted. This removes the need for external noise-reducing components like common mode reactors or hollow cores, thereby reducing device size while maintaining noise reduction effectiveness.
Solution Approach 2:
The gate drive circuit and semiconductor devices are merged onto the same substrate, eliminating the need for separate gate drive cables. This integration approach removes the source of common mode noise and eliminates the need for additional noise-reducing components, achieving both noise reduction and compact size.
2Object-affected harmful factors
If a common mode reactor or hollow core is inserted in the gate drive cable to reduce common mode noise, then noise reduction is achieved, but manufacturing cost increases
Solution Approach 1:
The invention extracts and eliminates the gate drive cable that causes common mode noise by implementing direct mounting of the gate drive circuit on the substrate where semiconductor devices are mounted. This removes the need for external noise-reducing components like common mode reactors or hollow cores, thereby reducing device size while maintaining noise reduction effectiveness.
Solution Approach 2:
The gate drive circuit and semiconductor devices are merged onto the same substrate, eliminating the need for separate gate drive cables. This integration approach removes the source of common mode noise and eliminates the need for additional noise-reducing components, achieving both noise reduction and compact size.
3Reliability
If gate drive circuit is connected to semiconductor devices through gate drive cable, then electrical connection is established, but common mode noise occurs
Solution Approach 1:
The invention extracts and eliminates the gate drive cable that causes common mode noise by implementing direct mounting of the gate drive circuit on the substrate where semiconductor devices are mounted. This removes the need for external noise-reducing components like common mode reactors or hollow cores, thereby reducing device size while maintaining noise reduction effectiveness.
Solution Approach 2:
The gate drive circuit and semiconductor devices are merged onto the same substrate, eliminating the need for separate gate drive cables. This integration approach removes the source of common mode noise and eliminates the need for additional noise-reducing components, achieving both noise reduction and compact size.
Data Source
AI summary
A power conversion unit includes a plurality of semiconductor modules, a gate drive circuit, a first substrate having a flat plate shape, and a second substrate having a flat plate shape. The first substrate has a first surface facing a bottom plate of a casing accommodating the semiconductor modules and the gate drive circuit, and a second surface on an opposite side to the first surface. The second substrate is arranged above the first substrate in parallel with the second surface. The semiconductor modules are mounted on the first surface. The gate drive circuit is formed on a surface of the second substrate on a side that does not face the second surface. The power conversion unit further includes a connector provided on the second surface and connected to a surface on a side facing the second substrate.


