Stacked Resistive Memory Device Integration
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Solution Overview
Problem
Conventional phase change memory devices face limitations in increasing degree of integration and driving speed due to single-layer memory cell fabrication and unitary data writing processes.
Innovation Solution
A resistive memory device with a stacked structure, including word lines, selection lines, a phase change material layer, and insulating layers, allowing for a gate-all-around configuration and alternating material layer formation to enhance integration and operational efficiency, enabling faster erase and program operations by writing data in units of memory blocks and cells respectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If memory cells are fabricated in a single layer over a substrate, then the device structure is simple, but the degree of integration cannot be increased further
Solution Approach 1:
The patent transitions from a planar single-layer structure to a three-dimensional stacked structure with multiple word lines and phase change material layers arranged vertically. This dimensional change enables increased degree of integration by utilizing the vertical space above the substrate, allowing multiple memory cells to be stacked in the thickness direction while maintaining a relatively simple overall device structure.
2Manufacturing precision
If data are written in units of memory cells, then the data writing precision is high, but the driving time becomes long
Solution Approach 1:
The patent segments the memory array into multiple memory blocks, each containing multiple memory cells arranged in a stacked configuration. This segmentation allows for parallel operation where multiple memory cells can be accessed and written simultaneously through the stacked structure, reducing the overall driving time while maintaining precise data writing capability through selective addressing of individual cells within blocks.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resistive memory device achieves increased integration and driving speed by performing erase operations in memory blocks and program operations in memory cells, improving data storage efficiency and reducing operational time.
Implementation Method 1
A phase change material layer has low resistance in a crystalline state and high resistance in an amorphous state
Implementation Method 2
A phase change memory device may supply a set pulse or a reset pulse to a phase change material layer and write data by using Joule heating generated thereby
Data Source
AI summary
A resistive memory device includes word lines stacked on top of one another, at least one first selection line formed over the word lines, a first channel layer passing through the word lines and the first selection line, a first phase change material layer formed in the first channel layer and overlapping the word lines, and a first insulating layer formed in the first channel layer and overlapping the first selection line.