Stacked Resistive Elements for High-Resistance Semiconductor Layouts
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Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable semiconductor devices at smaller sizes due to increased complexity and difficulty in fabrication processes as feature sizes decrease, requiring innovative solutions to maintain production efficiency and cost-effectiveness.
Innovation Solution
The formation of a semiconductor device structure involving multiple resistive elements with varying nitrogen concentrations and thicknesses, stacked and electrically connected in series, along with conductive and dielectric layers, to achieve higher resistance without occupying additional area and improve manufacturing flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost-effectiveness are improved, but fabrication process complexity and difficulty increase
Solution Approach 1:
The patent segments the resistive element formation into multiple distinct layers (first resistive layer with first nitrogen concentration, second resistive layer with second nitrogen concentration) that can be independently formed and controlled. This segmentation allows each layer to be optimized separately, simplifying the overall fabrication process while achieving the desired high resistance in a compact footprint.
Solution Approach 2:
The patent applies local quality by creating regions with different nitrogen concentrations within the resistive structure. The first resistive layer has a first atomic concentration of nitrogen while the second resistive layer has a second atomic concentration of nitrogen, allowing each region to contribute differently to the overall resistance, thereby achieving high resistance without increasing the lateral footprint.
2Area of stationary object
If multiple resistive elements are stacked vertically to achieve higher resistance, then area occupation is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent changes the nitrogen concentration parameter between layers (first atomic concentration vs. second atomic concentration) to differentiate the resistive layers and control their electrical properties. This parameter variation allows for precise control of resistance characteristics while maintaining manufacturability, as the distinct nitrogen concentrations provide clear process control points during fabrication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the achievement of desired resistance levels without area expansion, enhancing the performance and reliability of semiconductor devices while addressing the complexities of smaller feature sizes.
Implementation Method 1
a first resistive element over a substrate, and the first resistive element has a first sidewall extending in a first direction and a second sidewall opposite to the first sidewall and extending in the first direction
Data Source
AI summary
A semiconductor device structure and method for manufacturing the same are provided. The method includes forming a first resistive element over a substrate, and the first resistive element has a first sidewall extending in a first direction and a second sidewall opposite to the first sidewall and extending in the first direction. The method further includes forming a first conductive feature and a second conductive feature over and electrically connected to the first resistive element and forming a second resistive element over the first resistive element and spaced apart from the first resistive element in a second direction. In addition, the second resistive element is located between the first sidewall and the second sidewall of the first resistive element in a top view, and the first resistive element and the second resistive element are made of different nitrogen-containing materials.