Stacked RF Switch Cell Sensing for Voltage Distribution Balance

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Solution Overview

Problem

The unequal distribution of high voltage across stacked RF switch cells due to parasitic elements and effects leads to degradation of linearity and performance in RF switches, particularly in antenna aperture switches, where each cell should ideally share an equal fraction of the high voltage for optimal operation.

Innovation Solution

An RF switch with embedded voltage sensor circuits that measure the RF voltage swing across individual transistors without influencing the circuit's operation, providing a DC readout to report voltage distribution and enable adjustments to maintain optimal performance, using a combination of voltage dividers and sensing transistors to monitor and rectify the voltage distribution across the switch cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If multiple RF cells are coupled together to handle high voltage, then the voltage breakdown limit is exceeded and high voltage application is enabled, but unequal voltage distribution occurs due to parasitic elements affecting linearity and performance

Engineering Contradiction:
Improvevoltage handling capabilityVSAvoidvoltage distribution uniformity
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent implements a feedback mechanism by measuring the actual voltage across each RF cell using sensing circuits and using this information to adjust control signals. The system measures voltage distribution across stacked RF cells and feeds this information back to control elements that can adjust the voltage distribution, thereby compensating for parasitic effects and achieving more uniform voltage sharing among cells.

Inventive Principle:
Principle #23Feedback

2Measurement precision

If voltage sensor circuits are added to measure RF voltage swing, then voltage distribution can be monitored and optimized, but device complexity increases

Engineering Contradiction:
Improvevoltage measurement capabilityVSAvoidcircuit complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent merges the voltage sensing function with existing circuit elements by utilizing current nodes and load resistors that are already present in the RF switch architecture. The sensing circuits are integrated into the existing transistor structures, sharing common nodes and components, which reduces the overall device complexity while still providing precise voltage measurement capability.

Inventive Principle:
Principle #5Merging (Combining)

3Manufacturing precision

If voltage dividers and sensing transistors are used to monitor voltage distribution, then linearity can be maintained, but the circuit's operation may be influenced and performance degraded

Engineering Contradiction:
ImprovelinearityVSAvoidcircuit operation stability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies local quality by implementing sensing circuits only at specific critical nodes where voltage measurement is most impactful, rather than uniformly across all circuits. The voltage dividers and sensing transistors are strategically placed to monitor key voltage distribution points, providing linearity control where needed while minimizing interference with overall circuit operation.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution allows for precise measurement and visualization of voltage distribution across RF switch cells, enabling measures to maintain optimal linearity and performance without detuning the switch, thereby extending the sustainable RF voltage swing and preventing premature device failure.

Implementation Method 1

a first filter having an input coupled to the first current node of the first transistor and an output configured for providing a DC voltage corresponding to the RF power present at the first internal switch node

Methodology Applied
Scientific EffectRectification: Diode

Data Source

PatentUS10250251B1RF sensor in stacked transistors
Publication Date: 2019.04.02 INFINEON TECHNOLOGIES AG
  • US10250251B1 patent drawing
  • US10250251B1 patent drawing
  • US10250251B1 patent drawing

AI summary

An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.