Stacked RF Switch Shorting Circuit for Fast Switching and High Q
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Solution Overview
Problem
Stacked RF switches face a challenge in achieving both fast switching speeds and high Q factors, as low resistor values required for fast switching reduce Q factors below acceptable levels.
Innovation Solution
The implementation of shorting circuits in RF switching circuits allows for high resistance values while maintaining fast switching speeds, enabling the RF switch to operate in both ON and OFF modes with high Q factors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If low resistor values are used for fast switching, then switching speed is improved, but Q factor deteriorates
Solution Approach 1:
The patent applies dynamic control by using a shorting circuit that is activated during switching transitions to temporarily reduce the effective resistance. This dynamic adjustment allows the system to achieve fast switching speeds during transitions while maintaining high Q factors during steady-state operation, resolving the contradiction between switching speed and Q factor
Solution Approach 2:
The shorting circuit is periodically activated during switching transitions rather than being continuously on. This periodic action provides the necessary low resistance only during the brief transition periods to achieve fast switching, while allowing high resistance during steady-state to maintain high Q factors, thus resolving the contradiction
Data Source
AI summary
A first stacked RF switch, which operates in one of an ON mode and an OFF mode, and includes a group of RF switching circuits coupled in series between a first RF switch connection node and a second RF switch connection node, is disclosed. The group of RF switching circuits includes a first RF switching circuit, which includes a first switching transistor element coupled between a first source connection node and a first drain connection node, a first source/drain (S/D) bias resistive element coupled across the first switching transistor element, and a first S/D shorting circuit coupled across the first S/D bias resistive element. During the ON mode, the first switching transistor element is ON and the first S/D shorting circuit is ON. During a first interval immediately following a transition from the ON mode to the OFF mode, the first S/D shorting circuit is ON.