Stacked Semiconductor Package Layout for Compact 3D Integration

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Solution Overview

Problem

There is a demand for miniaturization and weight reduction in electronic components, particularly in semiconductor packages, to accommodate the increasing demand for portable devices, while maintaining high-capacity data processing capabilities.

Innovation Solution

A semiconductor package design featuring a stacked chip structure with a first semiconductor chip and a second semiconductor chip, separated by a semiconductor pattern and an insulating gap fill pattern, with through-electrode structures for enhanced connectivity, allowing for efficient integration and reduced volume.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If semiconductor chips are stacked vertically to reduce package size, then volume is reduced, but manufacturing complexity increases

Engineering Contradiction:
Improvepackage volumeVSAvoidstacked structure complexity
Core Design Contradiction:
Volume of moving objectVSDevice complexity

Solution Approach 1:

The patent divides the semiconductor package into multiple discrete chip layers (first semiconductor chip, second semiconductor chip) stacked vertically. Each chip is separated by insulating gap fill patterns and connected through through-electrode structures, creating segmented functional units that reduce overall package volume while maintaining manufacturability through modular assembly

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from a planar two-dimensional chip arrangement to a three-dimensional vertical stacking configuration. By utilizing the vertical dimension (z-axis) with multiple chip layers separated by insulating gaps and connected through through-electrodes, the package achieves higher integration density without proportionally increasing manufacturing complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Volume of moving object

If chip thickness is reduced to minimize package height, then volume is reduced, but structural strength decreases

Engineering Contradiction:
Improvepackage volumeVSAvoidchip structural strength
Core Design Contradiction:
Volume of moving objectVSStrength

Solution Approach 1:

The patent employs composite material structures where thin semiconductor chips are reinforced by bonding to substrate and interlayer materials. The first and second semiconductor chips are bonded to a substrate with insulating gap fill patterns, creating a composite structure that maintains structural integrity despite reduced individual chip thickness

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent incorporates insulating gap fill patterns between stacked chips that serve as cushioning elements. These gap fill patterns prevent direct contact and potential damage between chips during assembly and operation, providing mechanical protection that enables the use of thinner chips without compromising overall package strength

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Productivity

If integration density is increased to maintain processing capacity, then productivity is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvedata processing capacityVSAvoidalignment precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent introduces insulating gap fill patterns as intermediary elements between stacked semiconductor chips. These gap fill patterns provide a controlled interface that facilitates precise alignment and bonding, enabling high integration density through vertical stacking while maintaining achievable manufacturing precision through the mediating role of the insulating layers

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS11887966B2Semiconductor packages
Publication Date: 2024.01.30 SAMSUNG ELECTRONICS CO LTD
  • US11887966B2 patent drawing
  • US11887966B2 patent drawing
  • US11887966B2 patent drawing

AI summary

A semiconductor package includes a first structure including a first semiconductor chip, and a second structure on the first structure. The second structure includes a second semiconductor chip, a semiconductor pattern horizontally spaced apart from the second semiconductor chip and on a side surface of the second semiconductor chip, an insulating gap fill pattern between the second semiconductor chip and the semiconductor pattern, and through-electrode structures. At least one of the through-electrode structures penetrates through at least a portion of the second semiconductor chip or penetrates through the semiconductor pattern.