Stacked Semiconductor Alignment Detection via Electrical Characteristics

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional semiconductor devices face challenges in accurately and quickly detecting positional shifts between stacked semiconductor structures while maintaining the size of the structures unchanged.

Innovation Solution

A semiconductor device with a stacked structure where first and second semiconductor structures are bonded, featuring electrodes that change electrical characteristics based on positional shifts between connection terminals, allowing for detection without increasing the size of the structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional bonding methods are used, then the semiconductor structures can be stacked and bonded, but the positional shift detection is slow and inaccurate while requiring larger connection terminals

Engineering Contradiction:

Improvepositional shift detection accuracyVSAvoidconnection terminal size

Core Design Contradiction:

Measurement precisionVSArea of stationary object

Solution Approach 1:

The patent changes the detection parameter from physical dimension measurement to electrical characteristic measurement. By monitoring electrical characteristics (resistance, capacitance, or conductivity) of the electrodes, the system can detect positional shifts with high precision without requiring large connection terminals, thus resolving the contradiction between measurement precision and terminal size.

Inventive Principle:

Principle #35Parameter changes

2Productivity

Engineering Contradiction:

Improvepositional shift detection speedVSAvoidconnection terminal size

Core Design Contradiction:

ProductivityVSArea of stationary object

Solution Approach 1:

The patent replaces mechanical measurement methods with electrical measurement methods. Instead of using mechanical probes or optical systems to detect positional shifts, the invention uses electrical characteristics of electrodes to detect shifts, which enables faster detection speed and eliminates the need for large connection terminals required by conventional mechanical methods.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Area of stationary object

If the connection terminal size is reduced, then the semiconductor structure size is minimized, but the positional shift detection accuracy and speed deteriorate

Engineering Contradiction:

Improvesemiconductor structure sizeVSAvoidpositional shift detection accuracy

Core Design Contradiction:

Area of stationary objectVSMeasurement precision

Solution Approach 1:

The patent fundamentally changes the detection parameter from spatial/physical measurement to electrical measurement. This allows the use of small connection terminals while maintaining high detection accuracy, because electrical characteristics can be measured with high precision even when the physical dimensions of the terminals are small, thus resolving the contradiction between structure size and measurement precision.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables quick and accurate detection of positional shifts between semiconductor structures, reducing the need for larger connection terminals and maintaining the size of the semiconductor structures.

Implementation Method 1

a first electrode provided in the first semiconductor structure and capable of changing an electrical characteristic with respect to the second semiconductor structure according to a positional shift between the first connection terminal and the second connection terminal

Methodology Applied

Scientific EffectElectrical Conduction: Conduction (electrical)

Data Source

PatentUS20250113631A1Semiconductor device

Publication Date: 2025.04.03 SONY SEMICON SOLUTIONS CORP

AI summary

Provided is a semiconductor device capable of quickly and accurately detecting positional shift of a first semiconductor structure and a second semiconductor structure while suppressing an increase in size of the first semiconductor structure and/or the second semiconductor structure. A semiconductor device according to the present technology is a semiconductor device having a stacked structure in which a first semiconductor structure and a second semiconductor structures are stacked and bonded, in which the first semiconductor structure includes a first connection terminal exposed to a first bonding surface that is a bonding surface to the second semiconductor structure, the second semiconductor structure includes a second connection terminal exposed to a second bonding surface that is a bonding surface to the first semiconductor structure, and bonded to the first connection terminal, and the stacked structure includes at least one of a first electrode provided in the first semiconductor structure, and capable of changing an electrical characteristic with respect to the second semiconductor structure according to a positional shift between the first connection terminal and the second connection terminal, or a second electrode provided in the second semiconductor structure, and capable of changing an electrical characteristic with respect to the first semiconductor structure according to the positional shift.