Stacked Semiconductor Device with Barrier Layer
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Solution Overview
Problem
Current semiconductor devices face challenges in miniaturization and achieving favorable electrical characteristics, particularly in integrating high-density miniaturized transistors with reliable performance and novel structures.
Innovation Solution
A semiconductor device is designed with a stacked-layer structure comprising a first transistor with a single crystal semiconductor channel and a second transistor with an oxide semiconductor channel, separated by a barrier layer to suppress hydrogen and water diffusion, and an insulating layer with excess oxygen to reduce oxygen vacancies, enhancing the reliability and electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistors are miniaturized and integrated with high density, then productivity and device performance are improved, but manufacturing precision and reliability become more difficult to maintain
Solution Approach 1:
The patent divides the semiconductor device into multiple layers with different transistor types (first transistor with single crystal semiconductor, second transistor with oxide semiconductor). This segmentation allows each layer to be optimized independently for high-density integration while maintaining manufacturing precision through standardized formation processes for each transistor type.
Solution Approach 2:
The patent transitions from planar integration to three-dimensional stacked-layer structure, where transistors are arranged in multiple vertical layers. This dimensional change enables high-density integration without compromising manufacturing precision, as each layer can be formed using established precision processes while achieving higher overall integration density through vertical stacking.
2Length of moving object
If transistors are miniaturized, then device size is reduced, but electrical characteristics and reliability deteriorate
Solution Approach 1:
The patent applies different semiconductor materials with distinct properties to different regions/layers: single crystal semiconductor for the first transistor layer and oxide semiconductor for the second transistor layer. This local quality differentiation allows miniaturization while maintaining reliability, as each material type is optimized for specific electrical characteristics needed in its respective layer.
Solution Approach 2:
The patent employs a composite structure combining single crystal semiconductor and oxide semiconductor materials in a stacked configuration. This composite approach enables miniaturization while preserving electrical characteristics, as the combination of different semiconductor materials provides complementary properties that maintain reliability at reduced device dimensions.
3Length of moving object
If oxide semiconductor is used for miniaturization, then device size is reduced, but hydrogen and water diffusion affects reliability
Solution Approach 1:
The patent introduces a barrier layer as an intermediary component between the first transistor (single crystal semiconductor) and the second transistor (oxide semiconductor). This barrier layer acts as a mediator that prevents hydrogen and water diffusion from affecting the oxide semiconductor channel, thereby protecting the miniaturized device's reliability while maintaining the benefits of reduced device size.
Solution Approach 2:
The patent implements preliminary protective measures by forming the barrier layer before potential contamination can occur. This preliminary anti-action prevents hydrogen and water diffusion in advance, protecting the oxide semiconductor channel in the miniaturized device from harmful factors that would otherwise degrade reliability.
4Device complexity
If oxide semiconductor channel is used, then device complexity is reduced, but oxygen vacancies reduce electrical characteristics
Solution Approach 1:
The patent performs preliminary oxygen supply to the oxide semiconductor channel through an insulating layer containing excess oxygen. This preliminary action addresses oxygen vacancies before they can significantly degrade electrical characteristics, allowing the use of simpler oxide semiconductor materials while maintaining high reliability through pre-treatment rather than complex material engineering.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the creation of a highly reliable semiconductor device with improved electrical characteristics, suitable for miniaturization, and reduced off-state current, leading to increased performance and reduced power consumption.
Implementation Method 1
a barrier layer between the first transistor and the second transistor
Implementation Method 2
an insulating layer with excess oxygen to reduce oxygen vacancies
Data Source
AI summary
To provide a semiconductor device that is suitable for miniaturization. The semiconductor device includes a first transistor, a second transistor over the first transistor, a barrier layer between the first transistor and the second transistor, a first electrode between the first transistor and the barrier layer, and a second electrode between the hairier layer and the second transistor and overlapping the first electrode with the barrier layer therebetween. A gate electrode of the first transistor, the first electrode, one of a source electrode and a drain electrode of the second transistor are electrically connected to one another. A channel is formed in a first semiconductor layer including a single crystal semiconductor in the first transistor. A channel is formed in a second semiconductor layer including an oxide semiconductor in the second transistor.