3D Stacked Semiconductor Cooling With Heat Transfer Die Layers
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Solution Overview
Problem
Traditional semiconductor devices fabricated on a single silicon substrate face limitations in integrating multiple components due to high thermal resistance, which hinders efficient heat extraction and overall device performance.
Innovation Solution
A 3D stacked semiconductor structure with through silicon vias (TSVs) and heat transfer die layers, incorporating cooling channels between active and heat transfer die layers, reduces thermal resistance by using column interconnect structures to facilitate coolant flow on both sides of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional single substrate fabrication is used, then manufacturing simplicity is maintained, but device density and heat extraction efficiency are limited
Solution Approach 1:
The patent transitions from traditional planar single-substrate fabrication to three-dimensional stacked architecture. Multiple semiconductor layers are vertically stacked and interconnected through through-silicon vias (TSVs), enabling increased device density by utilizing the vertical dimension. This dimensional transition allows multiple functional layers to be integrated within a compact footprint while maintaining manufacturability through established TSV fabrication processes.
2Quantity of substance
If multiple stacked layers are implemented, then device density increases, but thermal resistance increases and heat extraction becomes difficult
Solution Approach 1:
The patent segments the stacked device structure into distinct functional layers, including active device layers and dedicated heat transfer die layers. This segmentation allows specific layers to be optimized for different functions: active layers for device operation and heat transfer layers for thermal management. The heat transfer die layers with lower thermal resistance are strategically positioned to facilitate heat extraction from the active layers, thereby managing thermal resistance in the stacked configuration.
Solution Approach 2:
The patent introduces heat transfer die layers as intermediary structures between active device layers and cooling channels. These intermediary heat transfer layers serve as thermal conduits that efficiently conduct heat from the active layers to the coolant. By positioning these heat transfer die layers adjacent to cooling channels and optimizing their thermal properties, the structure enables effective heat extraction despite the multi-layer stacking, thus resolving the thermal resistance challenge.
3Temperature
If cooling channels are embedded between layers, then heat extraction efficiency improves, but manufacturing complexity increases
Solution Approach 1:
The patent merges the structural support function and the thermal management function into an integrated stacked architecture. The same TSV structures that provide electrical interconnection between layers also define the geometry of cooling channels. Additionally, heat transfer die layers simultaneously provide mechanical support and serve as thermal conduits. This merging of functions reduces the need for separate cooling infrastructure and leverages existing fabrication processes, thereby improving heat extraction efficiency without proportionally increasing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively decreases through thermal resistance by up to 40% and enhances heat extraction, improving device performance and cooling efficiency.
Implementation Method 1
The at least one heat transfer die layer is fabricated to be in contact with a coolant on one or both sides
Implementation Method 2
the at least one heat transfer die layer is fabricated to be in contact with a coolant on one or both sides
Data Source
AI summary
An electrical device including a number of layers coupled with column interconnect structures, the number of layers further including at least one active layer with and at least one heat transfer die layer, the at least one active layer includes a back end of line (BEOL) layer and the at least one heat transfer die layer includes no or comparatively little BEOL layer relative to the BEOL layer of the at least one active layer. The at least one heat transfer die layer is designed to be in contact with a coolant.