Stacked Semiconductor Cooling Path for Heat Dissipation
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Solution Overview
Problem
Stack-type semiconductor devices face challenges in heat dissipation due to internal wire connections using solder bumps or vertical interconnections, which hinder effective heat removal from densely packed semiconductor chips, leading to degraded electrical characteristics as the number of stacked chips increases.
Innovation Solution
A semiconductor device with a concave-shaped cooling path on its bottom surface and a stack-type semiconductor device featuring an additional cooling path inside, allowing for enhanced heat dissipation through the use of vertical interconnections and bonding of semiconductor chips to create a three-dimensional structure with aligned or non-aligned cooling paths for efficient heat removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If solder bumps or vertical interconnections are used for internal wire connections in stack-type semiconductor devices, then integration and stacking of semiconductor chips are enabled, but heat dissipation becomes ineffective leading to degraded electrical characteristics
Solution Approach 1:
The invention introduces a cooling path that extends in the vertical dimension through the semiconductor chip thickness, rather than relying solely on lateral heat dissipation. The cooling path penetrates from the first surface through to the second surface, creating a three-dimensional heat removal architecture that enables effective cooling in stacked configurations where lateral cooling space is limited.
Solution Approach 2:
The cooling path is divided into multiple segments: a first cooling path portion extending from the first surface, a second cooling path portion extending from the second surface, and these portions connect within the chip to form a complete cooling circuit. This segmentation allows heat to be removed from both surfaces of the chip, doubling the effective cooling area and improving thermal management in high-density stacked devices.
2Productivity
If the number of stacked semiconductor chips is increased to improve integration, then device capability is enhanced, but heat dissipation problem becomes more severe
Solution Approach 1:
By creating cooling paths that traverse the vertical dimension of each chip and connecting to external cooling structures, the invention enables thermal management that scales with the number of stacked chips. Each chip in the stack can be independently cooled through its own cooling path, preventing thermal accumulation that would otherwise degrade electrical characteristics as stack height increases.
3Volume of moving object
If traditional wire bonding is replaced with vertical interconnections for compactness, then device size is reduced, but heat dissipation path is blocked
Solution Approach 1:
The vertical interconnection structures serve dual functions: electrical connection between stacked chips and as part of the cooling path architecture. The cooling path portions are integrated with the interconnection regions, allowing the same vertical structures to conduct both electrical signals and remove heat, thereby maintaining compact device size while enabling effective thermal management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively dissipates heat generated in semiconductor chips, preventing electrical characteristic degradation and minimizing warpage in thin semiconductor devices by providing an additional cooling path, enabling increased integration and stacking of semiconductor chips while maintaining device performance.
Implementation Method 1
a cooling path having a concave shape disposed on a second surface opposite the first surface of the semiconductor chip
Implementation Method 2
heat dissipation path
Data Source
AI summary
Provided is a semiconductor device having a cooling path on its bottom surface. The stack-type semiconductor device having a cooling path comprises a stack-type semiconductor chip comprising a first semiconductor chip and a second semiconductor chip. The first semiconductor chip comprises a first surface in which a circuit unit is formed and a second surface in which a first cooling path is formed, and the second semiconductor chip comprises a first surface in which a circuit unit is formed and a second surface in which a second cooling path is formed. The second surface of the first semiconductor chip and the second surface of the second semiconductor chip are bonded to each other, and a third cooling path is formed in the middle of the stack-type semiconductor chip using the first and second cooling paths. Warpage of the stack-type semiconductor device is suppressed and heat is easily dissipated.