Stacked Semiconductor Package With Thick Copper Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving improved heat dissipation and miniaturization, especially when handling wider bandwidth and complex high-frequency circuits.
Innovation Solution
A semiconductor device is designed with a stacked package structure, utilizing multiple substrates with thick copper base portions for enhanced heat dissipation. Each substrate has a semiconductor element mounted on its front surface via a heat sink, and electrically connected to a wiring pattern layer. A third interposer substrate is used to relay connections between the first and second substrates, optimizing electrical connectivity and reducing unnecessary coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a thick copper member is used for heat dissipation, then heat dissipation performance is improved, but device size increases
Solution Approach 1:
The patent transitions from planar heat dissipation to three-dimensional stacked architecture, where multiple substrates are vertically arranged with thick copper members positioned at strategic locations (back surfaces and between substrates) to dissipate heat from different thermal zones simultaneously, achieving superior heat management without proportional increase in footprint area
Solution Approach 2:
The patent embeds thick copper heat dissipation members within the multi-substrate structure itself, integrating them as intrinsic components rather than external attachments. The copper members are nested between substrates and on back surfaces, forming a compact hierarchical structure where heat dissipation functionality is built into the device architecture
2Temperature
If multiple substrates are stacked to improve heat dissipation, then heat dissipation is improved, but manufacturing complexity increases
Solution Approach 1:
The patent divides the device into multiple independent substrate modules, each with its own thick copper heat dissipation member. This segmentation allows each module to be manufactured and prepared separately, then assembled through standardized interconnection processes, reducing overall manufacturing complexity compared to creating a single monolithic structure
Solution Approach 2:
The patent employs standardized substrate designs with uniform thick copper member configurations that can serve multiple functions: heat dissipation, structural support, and electrical interconnection. This universality allows the same manufacturing processes and assembly techniques to be applied across all substrate pairs, simplifying production
3Volume of moving object
If substrates are stacked closely for miniaturization, then device size is reduced, but warpage during assembly increases
Solution Approach 1:
The patent positions thick copper members at specific locations (back surfaces and between substrates) where they provide localized structural reinforcement and thermal management. This local quality enhancement at critical stress and heat generation points prevents warpage without requiring uniform thickening across the entire device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves improved heat dissipation and miniaturization, enabling the semiconductor device to handle wider bandwidths while maintaining high reliability and manufacturability. The stacked structure reduces warpage during assembly, enhancing yield and stability.
Implementation Method 1
Since the semiconductor device disclosed in Patent Literature 1 uses a thick copper member having good heat diffusibility, there is an advantage that heat diffusibility is good, and heat generated in the semiconductor chip can be dissipated to the thick copper member
Implementation Method 2
a first semiconductor element mounted and fixed on the front surface of the first base portion of the first substrate via a first heat sink in the first opening of the first substrate
Data Source
AI summary
A semiconductor device including a first substrate including a first insulating substrate, a first wiring pattern layer and first front-side pads formed on a front surface of the first insulating substrate, and a first base portion constituted by thick copper on a back surface thereof, a first semiconductor element fixed to the first substrate via a first heat sink in a first opening of the first insulating substrate, a second substrate including a second insulating substrate, a second wiring pattern layer and second front-side pads formed on a front surface of the second insulating substrate, and a second base portion constituted by thick copper on a back surface thereof, a second semiconductor element fixed to the second substrate via a second heat sink in a second opening of the second insulating substrate, and a third substrate arranged between the first substrate and the second substrate to face them.