Display Device With Stacked Semiconductor Layers for High Aperture
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Solution Overview
Problem
Existing display devices face challenges in achieving high-definition, low power consumption, high visibility, and high reliability, particularly in liquid crystal displays, with limitations in aperture ratio and display quality.
Innovation Solution
The display device incorporates a transistor with a channel width of 30 μm to 1000 μm, multiple semiconductor layers containing metal oxides like indium or zinc, and conductive layers that transmit visible light, enhancing aperture ratio and display quality while using a field-sequential driving method with light-scattering liquid crystal elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If a transistor with a single semiconductor layer is used, then the device structure is simple, but the aperture ratio and display quality are limited
Solution Approach 1:
The semiconductor layer is divided into multiple stacked layers (first semiconductor layer, second semiconductor layer, third semiconductor layer) with different functionalities. The first layer forms the channel, the second layer provides light transmission, and the third layer enhances electrical characteristics. This segmentation allows each layer to be optimized for its specific function, achieving high aperture ratio through the light-transmitting second layer while maintaining device performance through the specialized channel and electrical characteristic layers.
Solution Approach 2:
The invention transitions from a single-layer planar structure to a multi-layer stacked vertical structure. By adding the dimension of layer stacking, the patent achieves multiple functions within a compact vertical space: the first layer handles channel formation, the second layer enables light transmission for high aperture ratio, and the third layer provides electrical optimization, thereby resolving the contradiction between structural simplicity and functional complexity.
2Measurement precision
If the channel width is increased to improve display quality, then the definition is enhanced, but the transistor area and power consumption increase
Solution Approach 1:
The patent applies different material compositions and structural characteristics to different regions and layers of the transistor. The first semiconductor layer has specific compositional ratios optimized for channel conductivity, the second layer is optimized for light transmission properties, and the third layer is optimized for electrical characteristics. This local optimization allows the transistor to achieve high display definition through improved carrier mobility in the channel region while maintaining low power consumption through efficient electrical characteristics in the source and drain regions.
3Speed
If conventional semiconductor materials are used, then the manufacturing process is established, but the response speed and reliability are limited
Solution Approach 1:
The patent employs a composite multi-layer semiconductor structure where each layer has distinct material compositions. The first semiconductor layer contains specific ratios of semiconductor materials optimized for channel formation, the second layer uses materials with high light transmission properties, and the third layer incorporates materials enhanced for electrical characteristics. This composite structure achieves both high response speed through optimized carrier transport in the channel layer and high reliability through the specialized electrical characteristic layer, surpassing the limitations of conventional single-material semiconductors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in a high-definition display device with low power consumption, high visibility, and improved reliability, along with a high aperture ratio, enabling wider choices in liquid crystal materials and increased response speed.
Implementation Method 1
the channel formation region of each of the plurality of semiconductor layers contains a metal oxide
Implementation Method 2
the third conductive layer has a function of transmitting visible light
Implementation Method 3
a liquid crystal element, the liquid crystal element be a light-scattering liquid crystal element
Data Source
AI summary
A highly visible display device is provided. The display device includes a transistor, a first conductive layer, a second conductive layer, and a third conductive layer. The channel width of the transistor is greater than or equal to 30 μm and less than or equal to 1000 μm The transistor includes 2 to 50 semiconductor layers, each of which includes a first region, a second region, and a channel formation region. The channel formation region has a region overlaps with the first conductive layer. The first region overlaps with the second conductive layer and does not overlap with the first conductive layer. The second region overlaps with the third conductive layer and does not overlap with the first conductive layer. The third conductive layer has a function of transmitting visible light, and the second region and the third conductive layer in a stacked state have a function of transmitting visible light.