Stacked Semiconductor Edge Damage Detection Structure
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Solution Overview
Problem
Semiconductor devices face challenges in detecting cracks and damage at their edges during manufacturing, which can propagate and affect performance, necessitating early detection to prevent failure.
Innovation Solution
A damage detection structure is integrated into the edge regions of stacked semiconductor components, comprising conductive paths in a staggered arrangement that surround active regions, allowing for early detection of damages through signal disruption monitoring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If semiconductor devices are manufactured with smaller sizes, then integration density and performance are improved, but manufacturing difficulty and defect occurrence increase
Solution Approach 1:
The damage detection structure is integrated into the semiconductor device during the manufacturing process, enabling early detection of edge damage before it propagates to active areas. This preliminary detection mechanism allows for quality control to be performed in advance, reducing the impact of manufacturing difficulties associated with smaller device sizes.
2Difficulty of detecting and measuring
If edge regions are monitored for damage, then detection capability is improved, but device complexity increases
Solution Approach 1:
The damage detection structure is merged with the existing semiconductor device architecture by integrating conductive paths into the edge regions. This combination allows damage detection functionality to be incorporated without adding separate, independent monitoring systems, thereby improving detection capability while minimizing the increase in device complexity.
Solution Approach 2:
The conductive paths in the edge regions serve dual functions: they are part of the normal device operation and simultaneously act as damage detection sensors. This multi-functionality allows the same structure to perform both operational and monitoring roles, improving detection capability without proportionally increasing device complexity.
Data Source
AI summary
A semiconductor device includes a first semiconductor component, a second semiconductor component, and a damage detection structure. The first semiconductor component includes a first edge region. The second semiconductor component is stacked below the first semiconductor component and includes a second edge region. The damage detection structure includes a plurality of first conductive paths and a plurality of second conductive paths. The first conductive paths are disposed in the first edge region. The second conductive paths are disposed in the second edge region and are electrically coupled to the first conductive paths.