Stacked Semiconductor Films for Individual Element Characteristic Control
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Solution Overview
Problem
In semiconductor device production, uniformly forming films around individualized semiconductor elements leads to challenges in regulating the unique characteristics of each element, causing stress-related deformation and increasing production costs due to waste from defective elements.
Innovation Solution
A semiconductor device design where the films on individualized semiconductor elements differ in configuration, type, thickness, or number, incorporating stress-regulating, oxygen-regulating, and hydrogen-regulating functions, and may include materials like SiN, SiO2, TiN, and SiGe epitaxial layers to address these variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If films are uniformly formed around all semiconductor elements, then the manufacturing process is simple and efficient, but the characteristics of individual semiconductor elements cannot be regulated
Solution Approach 1:
The patent applies local quality by forming different films (first film, second film, third film) with different properties on different semiconductor elements. Specifically, oxide semiconductor elements receive a first film with oxygen supply function, while non-oxide semiconductor elements receive a second film with oxygen barrier function. This allows each semiconductor element to have film characteristics tailored to its specific material properties and performance requirements.
2Manufacturing precision
If different films are formed on individual semiconductor elements, then the characteristics of each element can be regulated, but the manufacturing process becomes complex
Solution Approach 1:
The patent segments the film formation process into distinct stages: first forming a base film on all semiconductor elements, then selectively forming additional films (first film for oxide elements, second film for non-oxide elements) based on element type. This segmentation allows complex differentiation to be achieved through a structured, multi-stage process rather than a single complex step.
Solution Approach 2:
The patent employs preliminary action by first categorizing and forming a common base film on all semiconductor elements before proceeding to element-specific film formation. This preliminary uniform treatment simplifies subsequent selective processing, as the base film provides a consistent foundation upon which different additional films can be selectively deposited based on semiconductor element type.
3Productivity
If uniform films are formed, then production efficiency is high, but stress-related deformation occurs due to inability to regulate individual element characteristics
Solution Approach 1:
The patent applies parameter changes by selecting different film materials and properties based on semiconductor element type. Oxide semiconductor elements are paired with first films having oxygen supply function (e.g., metal films like Al, Ti, Cu), while non-oxide semiconductor elements are paired with second films having oxygen barrier function (e.g., oxide films like SiO2, SiN). This parameter differentiation regulates stress characteristics and prevents deformation while maintaining production efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively regulates the characteristics of each semiconductor element, reducing deformation and waste, thereby enhancing production efficiency and reducing costs.
Implementation Method 1
The first film may have a stress-regulating function. The first film may have a compressive stress-regulating function and may contain at least one selected from the group consisting of SiN, SiO2, TiN, TaN, and SiGe epitaxial layers.
Implementation Method 2
The first film may have an oxygen-absorbing function and contain at least one selected from the group consisting of polysilicon, amorphous silicon, and SiGe.
Implementation Method 3
The first film may have an oxygen diffusion prevention function and contain at least one selected from the group consisting of boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon, gallium, germanium, yttrium, zirconium, lanthanum, neodymium, hafnium, bismuth, niobium, tungsten, titanium, molybdenum, copper, ruthenium, nickel, or tantalum
Implementation Method 4
The first film may have a hydrogen-absorbing function and contain at least one selected from the group consisting of Ti, Zr, Pd, V, Ta, Fe, Co, Ni, Cr, Pt, Cu, Ag, La, Th, Y, Nb, Hf, Sc, Lu, Ru, Rh, Ir, Os, and Mg.
Implementation Method 5
The first film may have a hydrogen diffusion prevention function and contain at least one selected from the group consisting of silicon nitride, silicon oxynitride, low dielectric constant carbon-containing silicon oxide, silicon carbide, aluminum oxide, aluminum, tungsten, erbium oxide, a TiAl alloy, a nitride of TiAl alloy, amorphous silicon, and SiC.
Data Source
AI summary
In order to regulate the characteristics of each of a plurality of individualized semiconductor elements, the present technique provides a semiconductor device including a first semiconductor element and a plurality of second semiconductor elements with a circuit configured to process a signal from the first semiconductor element, wherein the first semiconductor element and each of the plurality of second semiconductor elements are stacked and arranged; and a first film formed on at least one of the plurality of second semiconductor elements is different in configuration from a second film formed on another of the second semiconductor elements.