Stacked Semiconductor Structure With Conductor Projection Heat Path

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Solution Overview

Problem

The existing semiconductor device configuration, with a Si die stacked on a GaAs die, faces challenges in heat dissipation due to the thermal resistance of the heat transfer path from the power amplifier transistor to the module substrate, limiting effective heat dissipation.

Innovation Solution

A semiconductor device design featuring a first member with a semiconductor substrate and electronic circuit, and a second member attached to its surface, incorporating a first conductor projection that protrudes through an opening in the second member to function as a heat transfer path to the module substrate, enhancing heat dissipation compared to wire bonding configurations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the semiconductor device is mounted face-up on the module substrate with wire bonding, then electrical coupling is achieved, but heat dissipation is insufficient due to high thermal resistance

Engineering Contradiction:
Improveheat dissipationVSAvoidthermal resistance
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent introduces a conductor projection as an intermediary heat transfer path between the semiconductor element and the module substrate. This conductor projection penetrates the second member and provides a direct thermal coupling path, effectively reducing thermal resistance without requiring face-down mounting or complex heat sink structures

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The conductor projection serves multiple functions simultaneously: it provides electrical coupling between the semiconductor element and the module substrate, acts as a mechanical support structure, and functions as a heat transfer path. This multi-functionality eliminates the need for separate wire bonding and heat dissipation structures

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If the power amplifier transistor is disposed on the upper surface of the GaAs die, then the control circuit can be stacked on top, but thermal resistance increases making heat dissipation difficult

Engineering Contradiction:
Improvestacked configurationVSAvoidheat dissipation
Core Design Contradiction:
Adaptability or versatilityVSTemperature

Solution Approach 1:

The patent transitions from a two-dimensional heat dissipation approach (relying on the substrate and ambient air) to a three-dimensional approach by introducing vertical heat transfer paths through the conductor projection. This allows heat to be conducted directly from the semiconductor element through the conductor projection to the module substrate, effectively bypassing the thermal resistance of the stacked configuration

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design improves heat dissipation by utilizing a conductor projection with higher thermal conductivity, reducing thermal resistance and facilitating face-down mounting on the module substrate, while also reducing parasitic inductance and preventing increased loss in inductors.

Implementation Method 1

The first conductor projection functions as a heat transfer path from the first electronic circuit of the first member to the module substrate

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240096824A1Semiconductor device
Publication Date: 2024.03.21 MURATA MFG CO LTD
  • US20240096824A1 patent drawing
  • US20240096824A1 patent drawing
  • US20240096824A1 patent drawing

AI summary

A stacked semiconductor device capable of increasing heat dissipation comprises a first member and a second member. The first member includes a semiconductor substrate and a first electronic circuit. The first electronic circuit includes a semiconductor element provided on one surface of the semiconductor substrate. A second member is attached to a first surface, which is one surface of the first member. The second member includes a second electronic circuit including another semiconductor element. The second member is provided with a first opening that penetrates the second member in a thickness direction. A first conductor projection is coupled to the first electronic circuit. The first conductor projection protrudes from the first surface of the first member through the first opening of the second member to the outside of the first opening.