Stacked Semiconductor Layers for Reduced Transistor Interface Area

The patent transitions from planar interface regions to three-dimensional stacked layers. Multiple device types are separated vertically through stacked semiconductor layers with selective removal of horizontal portions, enabling device differentiation in the vertical dimension rather than consuming horizontal chip area. This dimensional change allows high-density integration while maintaining distinct device regions.

The patent implements nested stacked layers where multiple semiconductor layers are positioned one over another in a vertical stack. Different device types are nested within this vertical structure, with each layer potentially forming a different device type. This nesting approach consolidates multiple interface regions into a single vertical column, dramatically reducing the horizontal footprint while maintaining device differentiation.

The patent selectively removes horizontal portions from the stacked layers, extracting only the necessary vertical portions that maintain device functionality. By removing the horizontal extensions that would create large interface regions, the patent reduces interface area while preserving the essential vertical device structure. This extraction principle eliminates unnecessary material that would otherwise increase chip area occupancy.

Instead of forming complete stacked layers and then removing portions, the patent inverts the approach by selectively forming only the necessary vertical portions from the beginning. The horizontal portions are never formed, directly achieving the goal of reduced interface area while maintaining complete device structures. This inversion eliminates the need for subsequent removal steps and directly optimizes the interface region.