Imaging Element Stacked Semiconductor Layers for Noise Reduction
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Solution Overview
Problem
Existing imaging devices suffer from noise issues that affect their performance.
Innovation Solution
The imaging element incorporates a semiconductor layer with a stacked structure of two layers, where the first layer has a shallower energy level at the lowest edge of the conduction band than the second layer, enhancing the transport of electric charge to the second electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single-layer semiconductor layer is used, then the device complexity is low, but the electric charge transport characteristics are insufficient leading to noise
Solution Approach 1:
The semiconductor layer is divided into two distinct layers (first semiconductor layer and second semiconductor layer) with different energy levels. The first layer has a deeper conduction band edge than the second layer, creating an energy gradient that facilitates directional charge transport from the photoelectric conversion layer to the second electrode, thereby reducing noise while maintaining manageable structural complexity
Solution Approach 2:
Each semiconductor layer is assigned a specific energy level characteristic tailored to its position and function. The first layer (closer to photoelectric conversion layer) has a deeper conduction band edge to accept electrons, while the second layer (closer to second electrode) has a shallower conduction band edge to facilitate electron extraction, optimizing local charge transport properties throughout the structure
2Reliability
If the energy level of the semiconductor layer is not optimized, then the manufacturing process is simple, but the electric charge transport to the second electrode is inefficient
Solution Approach 1:
The invention specifies precise energy level parameters for the semiconductor layers, particularly the conduction band edge positions. The first semiconductor layer is designed with a deeper conduction band edge than the second layer, creating a controlled energy gradient that drives efficient charge transport while providing clear fabrication guidelines for achieving the desired performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the characteristics of transporting electric charge, reducing noise and enhancing the performance of the imaging device.
Implementation Method 1
The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band
Data Source
AI summary
An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.