Stacked Semiconductor Pad Opening Layout for Insulation Reliability

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Solution Overview

Problem

Current semiconductor devices with stacked semiconductor substrates face challenges in maintaining insulating characteristics and mechanical strength, particularly in regions with exposed pad electrodes and photoelectric conversion elements, which can lead to reliability issues and image quality degradation.

Innovation Solution

A semiconductor device design where a first, second, and third semiconductor layer are stacked with insulating layers between them, featuring an opening portion that exposes pad electrodes and includes insulator portions to maintain insulating characteristics and enhance mechanical strength by controlling oxygen concentration and using conductive members to prevent water infiltration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If an opening portion is created to expose pad electrodes for electrical connection, then ease of operation is improved, but insulating characteristics deteriorate and water infiltration risk increases

Engineering Contradiction:
Improveelectrical connectionVSAvoidinsulating characteristics
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The opening portion is divided into multiple sections: a first opening in the first insulating layer, a second opening in the second insulating layer, and a third opening in the semiconductor layer. These segmented openings are filled with conductive material in stages, allowing electrical connection while maintaining insulation in other areas. The insulator portion further segments the opening region from adjacent functional regions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An insulator portion is introduced as an intermediary structure between the opening portion (which needs to be conductive for electrical connection) and the adjacent functional regions (which require insulation). This insulator portion acts as a mediator that prevents direct electrical interference and water infiltration pathways while allowing the opening to serve its electrical connection function.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If multiple semiconductor layers are stacked to increase functionality, then device capability is improved, but mechanical strength deteriorates and water infiltration risk increases

Engineering Contradiction:
Improvedevice functionalityVSAvoidmechanical strength
Core Design Contradiction:
Adaptability or versatilityVSStrength

Solution Approach 1:

The device uses composite structures combining different materials: insulating layers (such as silicon oxide or silicon nitride) are integrated with semiconductor layers to create a composite multilayer structure. This composite approach provides both the functional versatility of multiple semiconductor layers and the mechanical strength and water resistance of robust insulating materials.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

Insulating layers are placed between semiconductor layers as a preventive measure before water infiltration or mechanical failure can occur. These insulating layers act as cushioning barriers that protect the semiconductor layers from direct exposure to moisture and provide mechanical support to maintain structural integrity of the stacked configuration.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Reliability

If insulating layers are added between semiconductor layers to maintain insulation, then insulating characteristics are improved, but device complexity increases

Engineering Contradiction:
Improveinsulating characteristicsVSAvoidstructural complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The insulating layers serve multiple functions simultaneously: they provide electrical insulation between semiconductor layers, act as mechanical support structures to maintain device integrity, and serve as barriers against water infiltration. By making the insulating layers multi-functional, the design achieves reliable insulation without proportionally increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

4Ease of operation

If opening portions are used to access pad electrodes, then ease of operation is improved, but water infiltration risk increases

Engineering Contradiction:
Improveelectrical connectionVSAvoidwater infiltration
Core Design Contradiction:
Ease of operationVSObject-affected harmful factors

Solution Approach 1:

The insulator portion serves as an intermediary barrier between the opening portion (which provides electrical access) and the internal semiconductor structures. This intermediary insulating structure blocks water infiltration pathways while allowing the opening to maintain its electrical connection function.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

Insulating layers are positioned beforehand to cushion and protect against water infiltration before it can reach the semiconductor layers. These pre-positioned insulating barriers prevent water from penetrating through the opening portions to the sensitive electronic components.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS20240021648A1Semiconductor device
Publication Date: 2024.01.18 CANON KK
  • US20240021648A1 patent drawing
  • US20240021648A1 patent drawing
  • US20240021648A1 patent drawing

AI summary

A semiconductor device in which semiconductor layers are stacked is provided. A first structure is arranged between a first semiconductor layer and a second semiconductor layer. A second structure is arranged between the second semiconductor layer and a third semiconductor layer. In an orthographic projection to the third semiconductor layer, a region where elements are arranged in the third semiconductor layer is a first region, and a region between the first region and a peripheral portion of the third semiconductor layer is a second region. In the second region, an opening that extends through the third semiconductor layer, the second structure and the second semiconductor layer and exposes an electrode arranged in the first structure is arranged. Between the first region and the opening, an insulator is arranged at the same height as the second semiconductor layer.