Stacked Semiconductor Device Redundancy TSV Testing
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Solution Overview
Problem
Three-dimensional semiconductor devices face challenges in ensuring reliability due to the failure of through-silicon vias (TSVs), leading to wasted redundancy TSVs after repair, and there is a need for real-time on-line testing to detect soft errors.
Innovation Solution
A semiconductor device with a plurality of semiconductor dies stacked and through-electrodes, including a first calculation unit, a second calculation unit, and a comparator that perform logical operations on input and output signals, utilizing redundancy through-electrodes for testing and error detection, allowing for on-line testing and soft error detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If redundancy through-electrodes are formed to replace defective TSVs, then yield is improved, but the redundancy through-electrodes become wasted metal lines after repair
Solution Approach 1:
The patent recovers the functionality of redundancy through-electrodes that would otherwise be wasted after TSV repair. By configuring these redundancy TSVs as test signal transmission paths, the invention transforms discarded resources into useful testing infrastructure, enabling continuous monitoring of through-electrode integrity without consuming additional redundant resources.
Solution Approach 2:
The redundancy through-electrodes perform dual functions: serving as backup paths for defective TSV replacement and simultaneously functioning as test signal transmission paths for self-diagnosis of through-electrode defects. This self-service capability allows the device to autonomously monitor its own integrity using existing structural elements.
2Reliability
If traditional testing methods are used, then manufacturing process is simple, but real-time on-line testing and soft error detection cannot be performed
Solution Approach 1:
The redundancy through-electrodes are designed to serve multiple purposes: acting as backup interconnects for defective TSV replacement and simultaneously functioning as dedicated test signal transmission paths. This multi-functionality eliminates the need for separate testing infrastructure, enabling real-time reliability monitoring without proportionally increasing device complexity.
Solution Approach 2:
The patent introduces calculation units and comparators as intermediary components that facilitate testing by processing signals through the redundancy TSVs. These intermediaries enable sophisticated error detection and reliability assessment while maintaining a modular architecture that doesn't overly complicate the overall device structure.
3Reliability
If more redundancy through-electrodes are formed to ensure high yield, then more defects can be replaced, but the number of wasted redundancy through-electrodes increases
Solution Approach 1:
Instead of allowing excess redundancy through-electrodes to remain as wasted metal lines, the invention recovers their potential by configuring them as active test signal transmission paths. This approach ensures that even when all redundancy TSVs are used for defect replacement, the testing functionality is maintained through alternative signal paths.
Solution Approach 2:
The patent enables continuous useful action by making redundancy through-electrodes continuously functional - either as backup interconnects or as test signal paths. This eliminates periods of resource idleness and ensures that redundancy TSVs contribute to device functionality or reliability monitoring throughout operation.
Data Source
AI summary
A semiconductor device and a method for testing the same are provided. The semiconductor device includes a plurality of semiconductor dies staked, a plurality of through-electrodes disposed between the semiconductor dies, a first calculation unit calculating a first output value from input signals inputted into the through-electrodes by a logical operation, a second calculation unit calculating a second output value from output signals outputted from the through-electrodes by a logical operation, and a comparator comparing the first output value with the second output value.