Stacked Semiconductor Structure with Segmented Spacers
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Solution Overview
Problem
Portable information processing devices, especially display devices, face challenges in durability due to accidental drops, requiring a more reliable and convenient stacked structure that prevents damage from external forces.
Innovation Solution
A stacked structure with specific regions including spacers and bonding layers, where the bonding layer surrounds the first and second bases, preventing impurity diffusion and allowing for a predetermined distance between the bases, and an insulating layer with varying thickness to facilitate easy material movement and attachment, ensuring reliability and convenience.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If spacers are provided in all regions between the first base and the second base, then the distance between the bases is uniformly maintained, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent divides the space between the first base and second base into multiple distinct regions (first region with spacer, second region without spacer, third region with spacer, etc.), allowing different structural configurations in different areas. This segmentation enables the spacer to be strategically placed only where needed to maintain distance, rather than uniformly throughout the entire structure, thus reducing overall complexity while preserving manufacturing precision in critical areas.
Solution Approach 2:
The patent applies the local quality principle by providing spacers only in specific regions (first, third, and fifth regions) where distance maintenance is critical, while leaving other regions (second and fourth regions) without spacers. This localized approach ensures that the distance between bases is maintained where necessary without adding unnecessary structural complexity throughout the entire device.
2Reliability
If the bonding layer is provided in all regions, then the attachment between bases is maximized, but the prevention of impurity diffusion to specific regions is compromised
Solution Approach 1:
The patent extracts the bonding layer from specific regions (second and fourth regions) where it would facilitate impurity diffusion, while maintaining it in other regions (first, third, and fifth regions) where attachment strength is critical. This selective removal allows the structure to benefit from strong bonding where needed while preventing harmful impurity diffusion pathways in critical areas.
Solution Approach 2:
The spacer acts as an intermediary element between the first base and second base in regions where impurity diffusion must be prevented. By positioning the spacer to contact both bases and leaving the bonding layer absent in certain regions, the spacer serves as a physical barrier that mediates between the need for attachment strength and the need to block impurity diffusion pathways.
3Ease of manufacture
If the insulating layer has uniform thickness, then the manufacturing process is simpler, but the material movement and attachment process becomes more difficult
Solution Approach 1:
The patent applies dynamics by making the insulating layer thickness variable rather than static and uniform. The insulating layer is designed with different thicknesses in different regions (thinner in the first region, thicker in the third region), allowing material to move more easily during the attachment process. This dynamic thickness variation facilitates the bonding operation while still maintaining manufacturability through controlled deposition processes.
Data Source
AI summary
A novel stacked structure that is highly convenient or reliable is provided. A method for manufacturing a novel stacked structure that is highly convenient or reliable is also provided. Furthermore, a novel semiconductor device is provided. The stacked structure includes first to fifth regions in this order. Each of the first to fifth regions includes a first base and a second base. The first region, the third region, and the fifth region each include a spacer that makes a predetermined distance between the first base and the second base.