Stacked Semiconductor Device with Shared Electrode for Miniaturization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices are limited in their ability to be miniaturized while maintaining efficient electrical connections and reducing current density, which can lead to increased risk of destruction due to high current density.
Innovation Solution
The semiconductor device design includes a configuration with stacked semiconductor element units connected by a shared electrode, surrounded by n+ and n− type semiconductor regions, and conductive portions electrically connected to the first electrode, reducing electrical resistance and current density through a seamless conductive structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the device size is reduced, then mounting density increases, but current density increases leading to higher risk of device destruction
Solution Approach 1:
The patent transitions from planar electrode arrangement to a three-dimensional stacked configuration where semiconductor element units are arranged vertically and connected through intermediate electrodes. This dimensional change allows current paths to extend through multiple layers, effectively distributing current density across a larger volume while maintaining a compact footprint, thus reducing the risk of device destruction during miniaturization
Solution Approach 2:
The patent divides the semiconductor device into multiple semiconductor element units (first, second, third units) with corresponding electrodes (first, second, third electrodes) arranged in stacked layers. This segmentation creates multiple current paths and distributes electrical load across several components, preventing excessive current density concentration in any single element and improving overall device reliability during miniaturization
2Area of stationary object
If semiconductor element units are stacked to reduce device footprint, then mounting density increases, but electrical resistance may increase due to additional connection interfaces
Solution Approach 1:
The patent merges multiple electrode functions into shared intermediate electrodes. The second electrode serves dual purposes: it acts as the output electrode for the second semiconductor element unit and simultaneously as the input electrode for the third semiconductor element unit. This merging eliminates the need for separate connection interfaces, reducing cumulative electrical resistance while achieving compact stacked arrangement
Solution Approach 2:
The patent ensures continuous electrical connection through seamless electrode integration across stacked semiconductor element units. The intermediate electrodes provide uninterrupted current paths between units, maintaining continuous useful action (electrical conduction) throughout the stacked structure. This continuity minimizes resistance increases that would otherwise result from multiple discrete connection interfaces
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a reduction in device size, increased mounting density, and lower current density, thereby reducing the risk of device destruction while maintaining efficient electrical connections.
Implementation Method 1
conductive portions electrically connected to the first electrode, reducing electrical resistance and current density through a seamless conductive structure
Data Source
AI summary
A semiconductor package in an embodiment includes a semiconductor device which has a first semiconductor element, a second semiconductor element, and a common first electrode between the first and second semiconductor elements. A second electrode is electrically connected to the first semiconductor element. A third electrode extends through the second semiconductor element and electrically connects to the first electrode. A fourth electrode is electrically connected to the second semiconductor element. A first terminal of the package is electrically connected to the third electrode. A second terminal of the package is electrically connected to the second electrode and the fourth electrode. An insulating material surrounds the semiconductor device.