Stacked Semiconductor Temperature Measurement via Voltage Variation
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Solution Overview
Problem
In semiconductor memory apparatuses with stacked memory chips, precise temperature information is necessary to control operations and reduce errors, as temperature variations across layers affect transistor characteristics, but existing technologies struggle to accurately measure temperature differences between stacked layers.
Innovation Solution
A semiconductor apparatus with stacked structural bodies, each equipped with temperature voltage generation and determination units, generates and processes temperature voltages with different voltage level variations to produce temperature information, using through vias for electrical connection and synchronized control pulses to ensure precise temperature measurement across layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple temperature measurement commands are sent to each stacked layer, then temperature information for each layer can be obtained, but measurement time and system complexity increase
Solution Approach 1:
The patent combines temperature measurement operations for multiple stacked layers into a single measurement cycle. The temperature measurement unit in the first substrate measures temperatures of both the first and second stacked layers simultaneously by sharing the same measurement circuitry and timing signals, thereby obtaining temperature information for all layers without sending separate measurement commands to each layer.
Solution Approach 2:
The temperature measurement unit is designed with multi-functionality to handle measurements across different stacked layers. A single temperature measurement unit can measure temperatures of multiple layers by switching measurement targets based on control signals, making the measurement system universal rather than requiring dedicated measurement units for each layer.
2Measurement precision
If separate temperature measurement circuits are provided in each stacked layer, then temperature measurement capability is improved, but device complexity and area increase
Solution Approach 1:
The patent merges temperature measurement functions across multiple stacked layers into a single temperature measurement unit located in the first substrate. This unified measurement unit shares common measurement circuits, signal processing paths, and control logic, thereby reducing overall system complexity while maintaining the capability to measure temperatures of all stacked layers.
Solution Approach 2:
The patent introduces a control signal mechanism that acts as an intermediary to coordinate temperature measurements across different layers. The control unit generates timing signals that enable the single temperature measurement unit to sequentially or simultaneously measure different layers, eliminating the need for separate measurement circuits in each layer while maintaining measurement capability.
3Productivity
If temperature measurement is performed simultaneously in all stacked layers, then measurement efficiency improves, but signal interference and measurement accuracy deteriorate
Solution Approach 1:
The patent implements periodic measurement action where the temperature measurement unit measures temperatures of different stacked layers in a sequential manner within a single measurement cycle. Control signals enable the measurement unit to switch between layers at specific time intervals, ensuring that measurements are performed in an organized periodic sequence rather than truly simultaneous operations, thereby avoiding signal interference while maintaining measurement efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for accurate and efficient acquisition of temperature information across stacked structural bodies with a single temperature measurement command, improving operational control and reducing errors by precisely measuring temperature variations in each layer.
Implementation Method 1
a first temperature voltage generation unit configured to generate a first temperature voltage and a second temperature voltage which have different voltage level variations according to a temperature variation
Data Source
AI summary
A semiconductor apparatus includes a first structural body including a first temperature voltage generation unit configured to generate first and second temperature voltages which have different voltage level variations according to a temperature variation, in response to a temperature measurement command, and a first temperature information determination unit configured to generate first temperature information depending on a difference between levels of the first and second temperature voltages; and a second structural body including a second temperature voltage generation unit configured to generate a third temperature voltage and a fourth temperature voltage which have different voltage level variations according to a temperature variation, when a predetermined time elapses after the first and second temperature voltages are generated from the first structural body, and a second temperature information determination unit configured to generate second temperature information depending on a difference between levels of the third and fourth temperature voltages.