Stacked Semiconductor Interconnect Structure With Thermal Insulating Layer
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving efficient heat dissipation due to limitations in thermal conductivity within semiconductor devices, particularly in the interconnection structures and dielectric layers.
Innovation Solution
The implementation of an electrical insulating and thermal conductive layer, such as hexagonal boron nitride or aluminum nitride, is deposited over the semiconductor substrate, with a dielectric structure and conductive elements formed to create a dual damascene interconnection structure, enhancing thermal conductivity and heat dissipation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional dielectric layers and interconnection structures are used in semiconductor devices, then manufacturing processes are simpler and electrical insulation is adequate, but thermal conductivity is insufficient leading to poor heat dissipation
Solution Approach 1:
The patent employs composite material structures combining dielectric layers with thermally conductive materials. Specifically, it uses dielectric layers (such as silicon oxide, silicon nitride) combined with thermally conductive interconnection structures containing metals like copper, aluminum, or tungsten. This composite approach enables the structure to maintain electrical insulation properties while significantly improving thermal conductivity for enhanced heat dissipation.
Solution Approach 2:
The interconnection structures in the patent serve dual functions: they provide electrical connectivity between circuit elements and simultaneously act as heat dissipation pathways. By designing these interconnection structures with high thermal conductivity materials, the patent enables them to perform both their traditional electrical function and an additional thermal management function, thereby improving heat dissipation without adding separate dedicated cooling structures.
2Temperature
If thermally conductive materials are added to improve heat dissipation, then thermal conductivity increases, but manufacturing process complexity increases
Solution Approach 1:
The patent merges the formation of thermally conductive interconnection structures with the existing semiconductor manufacturing process flow. The interconnection structures are formed using standard deposition and patterning techniques already employed in CMOS fabrication, integrating thermal management functionality into the conventional manufacturing sequence without requiring entirely new process equipment or methods.
Solution Approach 2:
The patent utilizes parameter changes in material deposition and processing to achieve desired thermal conductivity properties. By adjusting deposition conditions, material composition ratios, and processing temperatures during fabrication, the patent optimizes the thermal conductivity of interconnection structures while maintaining compatibility with existing manufacturing parameters and process windows.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves heat dissipation efficiency by providing higher thermal conductivity than traditional materials, facilitating both the dual damascene process and metal deposition while maintaining electrical insulation.
Implementation Method 1
an electrical insulating and thermal conductive layer is disposed over the semiconductor substrate... a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.