Stacked Semiconductor Device TSV Signal Collision Prevention
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Solution Overview
Problem
In semiconductor devices with a 3D stacked structure, signal collisions among semiconductor layers occur due to shared through-silicon vias (TSVs), leading to inaccurate signal transmission and performance deterioration.
Innovation Solution
The implementation of a semiconductor device with a stacked structure that uses separate output paths for temperature information and other signals, employing temperature sensor circuits and fuse units to prevent collisions by ensuring each semiconductor layer transmits its information through distinct paths or is insulated from the TSVs, thereby avoiding signal interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-silicon vias (TSVs) are used to transmit signals among semiconductor layers, then signal transmission is enabled, but signal collisions occur leading to inaccurate transmission and performance deterioration
Solution Approach 1:
The patent divides the signal transmission paths by segmenting TSV usage - dedicated TSVs for data signals, separate TSVs for temperature information, and isolated TSVs for other signals. This segmentation prevents signal collisions by ensuring each signal type has its own dedicated transmission path, thereby improving signal transmission accuracy while managing device complexity through systematic path separation.
Solution Approach 2:
The patent introduces intermediary structures such as isolation regions and separate output paths that mediate between different signal sources and the TSV transmission medium. These intermediaries prevent direct interaction between conflicting signals (data, temperature, control), allowing reliable transmission through the shared TSV infrastructure without collisions.
2Productivity
If multiple semiconductor layers share common TSVs for signal transmission, then device integration is achieved, but signal collisions occur among different layers
Solution Approach 1:
The patent segments the TSV transmission medium by allocating specific TSVs to specific layers or signal types. Dedicated TSVs are assigned to each semiconductor layer for data transmission, while separate TSVs handle temperature monitoring and control signals. This segmentation maintains high device integration by using TSVs throughout the stacked structure while preventing signal collisions through dedicated transmission paths.
Solution Approach 2:
The patent resolves signal collisions by adding a dimensional aspect to signal routing - using vertical stacking of semiconductor layers with horizontally separated TSV groups. Each layer communicates through its own designated TSV column, transforming the problem from a 2D planar collision issue into a 3D organized transmission system where signals are separated both vertically (by layer) and horizontally (by TSV group).
Data Source
AI summary
A semiconductor device, memory device, system, and method of using a stacked structure for stably transmitting signals among a plurality of semiconductor layers is disclosed. The device includes at least a first semiconductor chip including a first temperature sensor circuit configured to output first temperature information related to the first semiconductor chip, and at least one through substrate via.