Stacked Semiconductor Device TSV Defect Detection Circuit
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Solution Overview
Problem
In stacked semiconductor devices, through-silicon vias (TSVs) can experience defects such as voids, bump contact failures, and cracking, leading to electrical connectivity issues, necessitating effective testing methods to detect and potentially repair these defects.
Innovation Solution
A semiconductor device with a plurality of vertically stacked chips, each equipped with first and second through-electrodes, voltage driving circuits, and a failure detection circuit to test and identify defects in TSVs, including open and short failures, by applying test voltages and ground voltages and generating failure signals based on detection signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional testing methods are used for through-electrodes in stacked semiconductor devices, then individual through-electrode defects can be detected, but the test time is excessively long and multiple testing steps are required
Solution Approach 1:
The patent combines multiple through-electrode testing operations into a single integrated testing structure. First through-electrodes and second through-electrodes are arranged in adjacent regions, allowing simultaneous testing of multiple through-electrodes through a unified testing circuit architecture that shares common voltage application and signal detection pathways
Solution Approach 2:
The patent introduces a spatial dimension to testing by arranging first and second through-electrodes in adjacent regions rather than testing them sequentially in the same region. This spatial arrangement enables parallel testing operations, transforming a time-sequential process into a space-parallel process that significantly reduces total test time
2Reliability
If comprehensive testing of all through-electrodes is performed, then defect detection coverage is improved, but the testing circuit complexity and number of testing steps increase
Solution Approach 1:
The testing circuit is designed with universal components that can handle both first through-electrodes and second through-electrodes. The voltage application circuit and signal detection circuit serve multiple functions by accommodating different through-electrode groups through selective activation, reducing the need for dedicated testing circuits for each through-electrode group
Solution Approach 2:
The through-electrodes are segmented into first through-electrodes and second through-electrodes located in adjacent regions, allowing independent control and testing of each segment. This segmentation enables selective testing of specific through-electrode groups by activating corresponding voltage application circuits, managing complexity through modular organization
Data Source
AI summary
A stacked semiconductor device includes: a plurality of semiconductor chips that are stacked in a vertical direction, wherein each of the semiconductor chips includes: a plurality of first through-electrodes; a plurality of second through-electrodes positioned adjacent to the first through-electrodes; a first voltage driving circuit suitable for providing the first through-electrodes with a test voltage or a ground voltage based on a first driving control signal; a second voltage driving circuit suitable for providing the second through-electrodes with the test voltage or the ground voltage based on a second driving control signal; and a failure detection circuit suitable for generating a failure signal based on a plurality of first detection signals received through the first through-electrodes and a plurality of second detection signals received through the second through-electrodes.