Stacked Semiconductor Device Thermal Management via Via Configuration

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Solution Overview

Problem

Existing image pickup apparatuses in endoscopes face challenges in managing heat generated by semiconductor devices, leading to potential degradation of image quality and reliability due to thermal noise, as the heat transfer from high-heat generation circuits is not efficiently managed within the stacked device configuration.

Innovation Solution

The solution involves a stacked device configuration where the semiconductor device with the highest thermal resistance is positioned in front of the surface with the largest heat generation circuit, utilizing conformal or filled vias for through electrodes, and strategically placing intermediate layers with high thermal resistance to direct heat away from the image pickup device, thereby reducing thermal noise and enhancing reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If multiple semiconductor devices are stacked to reduce size and parasitic capacitance, then device integration is improved, but heat management becomes more difficult

Engineering Contradiction:
Improvedevice sizeVSAvoidheat management
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The patent segments the heat management function by introducing separate heat-resistant layers between semiconductor devices. These intermediate layers are specifically designed to manage thermal flow from high-heat generation circuits, allowing the stacked device to maintain compact size while effectively distributing and managing heat across different levels of the stack.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces heat-resistant layers as intermediary elements between semiconductor devices. These intermediate layers act as thermal mediators that control heat flow paths, preventing excessive heat accumulation in the image pickup device while maintaining the compact stacked structure. The intermediate layers are strategically positioned to intercept and redirect heat from high-power circuits.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Volume of moving object

If high-heat generation circuits are placed close to the image pickup device for compact design, then device integration is improved, but thermal noise increases

Engineering Contradiction:
Improvedevice integrationVSAvoidthermal noise
Core Design Contradiction:
Volume of moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent extracts the heat management function from the standard semiconductor layer structure by introducing dedicated heat-resistant layers. These intermediate layers are specifically designed to remove and redirect heat from high-heat generation circuits before it can reach the image pickup device, thereby eliminating thermal noise while maintaining compact integration.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The heat-resistant layers serve as intermediary barriers between high-heat generation circuits and the image pickup device. These intermediate layers control the thermal interaction, allowing electrical functionality to remain integrated while preventing harmful thermal effects from propagating to the sensitive image sensor.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If through electrodes are filled to improve electrical connection, then electrical conductivity is improved, but thermal conduction increases

Engineering Contradiction:
Improveelectrical connectionVSAvoidthermal conduction
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent applies different via filling strategies to different locations based on thermal requirements. Conformal vias are used in regions where thermal conduction should be minimized (near the image pickup device), while filled vias are used in regions where electrical connection is prioritized. This local differentiation allows the device to optimize both electrical reliability and thermal management in different areas.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the physical parameters of through electrodes (filling state, material composition, geometry) to control thermal conduction properties. By adjusting via filling ratios and materials, the device optimizes the balance between electrical conductivity and thermal conduction, reducing heat transfer to the image pickup device while maintaining reliable electrical connections.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces the heat impact on the image pickup device, ensuring high reliability and image quality by efficiently transferring heat to the wiring board and signal cable, thus minimizing thermal noise and maintaining the small diameter of the distal end portion for less-invasive procedures.

Implementation Method 1

thermal resistance of a through electrode is highest among the plurality of through electrodes, is disposed in front of a first surface on which a first circuit that is one of the semiconductor circuits having a largest heat generation amount is formed

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS12028597B2Image pickup apparatus and endoscope
Publication Date: 2024.07.02 OLYMPUS CORPORATION(JP)
  • US12028597B2 patent drawing
  • US12028597B2 patent drawing
  • US12028597B2 patent drawing

AI summary

An image pickup apparatus includes a stacked device in which a plurality of semiconductor devices respectively including a plurality of through electrodes are stacked, a first semiconductor device, among the plurality of semiconductor devices, in which thermal resistance of a through electrode is highest among the plurality of through electrodes, is disposed in front of a first surface on which a first circuit that is one of the semiconductor circuits having a largest heat generation amount is formed, the plurality of through electrodes of the first semiconductor device are conformal vias, and the plurality of through electrodes of semiconductor devices other than the first semiconductor device are filled vias.