Stacked Semiconductor Detection Device for X-Ray Noise Reduction

Solution Overview

Problem

Conventional radiation detection devices with increased semiconductor layer thickness face decreased accuracy and increased noise due to unstable electric field operations and varying detection sensitivity across the thickness direction, while thinner layers lead to increased electric capacitance and noise.

Innovation Solution

A detection device with multiple semiconductor layers stacked in the thickness direction, featuring electrode regions arranged at intervals in a cross direction to generate an electric field and reduce electric capacitance, and a semiconductor region between electrode regions to amplify electric charges, improving detection accuracy and efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the thickness of the semiconductor layer is increased to improve detection efficiency, then detection efficiency is improved, but measurement precision deteriorates due to decreased accuracy and increased noise

Engineering Contradiction:

Improvedetection efficiencyVSAvoiddetection accuracy

Core Design Contradiction:

ProductivityVSMeasurement precision

Solution Approach 1:

The semiconductor layer is divided into multiple thin semiconductor layers stacked in the thickness direction, with electrode regions arranged at intervals in the cross direction. This segmentation allows the detection device to achieve both increased effective detection thickness and maintained measurement precision by distributing the detection function across multiple segmented layers with stable electric field operations in each layer.

Inventive Principle:

Principle #1Segmentation

2Productivity

If the thickness of the semiconductor layer is increased, then detection efficiency is improved, but device complexity increases due to unstable electric field operations

Engineering Contradiction:

Improvedetection efficiencyVSAvoidelectric field stability

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The semiconductor layer is divided into multiple thin semiconductor layers stacked in the thickness direction, with electrode regions arranged at intervals in the cross direction. This segmentation allows the detection device to achieve both increased effective detection thickness and maintained measurement precision by distributing the detection function across multiple segmented layers with stable electric field operations in each layer.

Inventive Principle:

Principle #1Segmentation

3Reliability

If the semiconductor layer thickness is decreased to improve electric field stability, then electric field stability is improved, but detection efficiency decreases

Engineering Contradiction:

Improveelectric field stabilityVSAvoiddetection efficiency

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The detection device utilizes the thickness direction by stacking multiple semiconductor layers, effectively increasing the detection path length for radiation without compromising electric field stability in the cross direction. The electrode regions are arranged at intervals in the cross direction to maintain stable electric fields, while the stacked configuration in the thickness direction provides enhanced detection efficiency through increased interaction probability with incident radiation.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

4Productivity

If the number of semiconductor layers is increased, then detection efficiency is improved, but manufacturing precision requirements increase

Engineering Contradiction:

Improvedetection efficiencyVSAvoidlayer stacking accuracy

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The semiconductor layer is divided into multiple thin semiconductor layers stacked in the thickness direction, with electrode regions arranged at intervals in the cross direction. This segmentation allows the detection device to achieve both increased effective detection thickness and maintained measurement precision by distributing the detection function across multiple segmented layers with stable electric field operations in each layer.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances detection accuracy and efficiency for high-energy electromagnetic radiation like X-rays and γ-rays by reducing noise and maintaining consistent detection sensitivity across the thickness direction, while also enabling energy spectroscopy by varying the number of semiconductor layers.

Implementation Method 1

configured to generate electric charges by a photoelectric effect of irradiation of radiation

Methodology Applied

Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

configured to produce an electric field in the cross direction by voltage application

Methodology Applied

Scientific EffectElectric field: Electric Field

Data Source

PatentUS11037993B2Detection device and detector

Publication Date: 2021.06.15 KK TOSHIBA

AI summary

A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.