Stacked Imaging Sensor Coupling Layout for Stable Signal and Power Routing

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Solution Overview

Problem

Existing solid-state imaging devices lack detailed examination of variations in electrically coupling signal lines and power supply lines between stacked substrates, limiting their performance potential.

Innovation Solution

A solid-state imaging device configuration with three substrates, where the first and second substrates are bonded face-to-face without a coupling structure, and various coupling structures are provided between the second and third substrates, and between the first and third substrates, allowing for multiple coupling configurations to enhance performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If coupling structures are formed between all stacked substrates, then electrical connection between substrates is improved, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improveelectrical connection between substratesVSAvoidcoupling structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the coupling structures by providing them only between specific substrate pairs (first and second substrates, second and third substrates) rather than between all substrates. This selective segmentation reduces overall device complexity while maintaining necessary electrical connections for signal and power transmission across the stacked configuration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The coupling structures serve multiple functions simultaneously: they provide electrical connection between substrates, transmit signals, and distribute power. By designing these structures to handle multiple functions, the patent reduces the need for separate dedicated structures for each function, thereby reducing overall complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Productivity

If detailed examination of coupling structure variations is conducted, then performance optimization is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveperformance optimizationVSAvoidcoupling structure fabrication precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent optimizes performance by varying parameters of the coupling structures such as their positions, dimensions, and configurations between different substrate interfaces. By carefully selecting and adjusting these parameters within reasonable ranges, the patent achieves performance optimization without requiring extreme manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies different coupling structure configurations at different locations between substrate pairs, optimizing each local region's electrical connection characteristics. This localized optimization allows performance improvement in critical areas while maintaining simpler structures in less critical areas, balancing performance and manufacturability.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12080745B2Solid-state imaging device and electronic apparatus
Publication Date: 2024.09.03 SONY SEMICON SOLUTIONS CORP
  • US12080745B2 patent drawing
  • US12080745B2 patent drawing
  • US12080745B2 patent drawing

AI summary

A solid-state imaging device is provided that comprises a first substrate that includes a first multi-layered wiring layer stacked on a first semiconductor substrate, a second substrate that includes a second multi-layered wiring layer and an insulating layer stacked on a second semiconductor substrate, and a third substrate that includes a third multi-layered wiring layer stacked on a third semiconductor substrate. A first coupling structure electrically couples the first and second substrates to each other. A second coupling structure exists on bonding surfaces of the second and third substrates, and includes an electrode junction structure in which electrodes formed on respective bonding surfaces are in direct contact with each other. A first via penetrates the second semiconductor substrate and electrically couples a first electrode to a wiring in the second multi-layered wiring layer. A second via electrically couples the second electrode to another wiring in the third multi-layered wiring layer.