Stacked SiC Semiconductor Layers for Deep Doping Profiles
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Solution Overview
Problem
Existing methods face challenges in creating deep doping profiles in silicon carbide-based power semiconductor devices due to limitations in dopant diffusion and ion implantation, particularly in establishing doping structures that extend beyond 0.2 microns.
Innovation Solution
A method involving the formation of multiple thin semiconductor layers, each implanted with dopants, which are then stacked to form a desired doping profile, allowing for control from both sides and enabling thicker individual layers, thereby overcoming the limitations of traditional methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If traditional dopant diffusion and ion implantation methods are used, then doping structures can be established, but the doping depth is limited to less than 0.2 microns
Solution Approach 1:
The patent divides the doping process into multiple discrete steps, creating separate semiconductor layers at different depths. Each layer is doped independently and then stacked to form the final structure. This segmentation allows dopant columns to extend beyond 0.2 microns by accumulating doping effects across multiple layers, directly resolving the depth limitation of traditional single-step methods.
Solution Approach 2:
The patent transitions from a single-layer lateral doping approach to a multi-layer vertical stacking approach. By adding the vertical dimension through layer stacking, the doping depth is extended beyond the 0.2 micron limit of conventional planar methods. The dopant columns are formed by stacking doped layers rather than diffusing through a single thick layer, enabling deeper doping profiles.
2Manufacturing precision
If multiple thin semiconductor layers are stacked to achieve deep doping profiles, then doping precision is improved, but the number of layers increases
Solution Approach 1:
The patent uses a moderate number of stacked layers (typically 2-5 layers) rather than attempting to achieve deep doping through excessive numbers of thin layers. This partial action approach provides sufficient doping depth control and precision while avoiding the complexity and manufacturing difficulty associated with stacking too many layers. The method achieves the necessary doping profile precision with a manageable number of layers.
3Length of stationary object
If traditional single-layer doping methods are used, then the fabrication process is simpler, but doping depth beyond 0.2 microns cannot be achieved
Solution Approach 1:
The fabrication process is segmented into manageable steps: forming individual semiconductor layers with specific doping concentrations, separating these layers, and then stacking them in a controlled manner. This segmentation makes the complex task of achieving deep doping profiles feasible by breaking it down into standard, repeatable manufacturing operations that can be performed with existing equipment and processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for more precise doping profiles and reduces the number of layers required, resulting in time and cost savings while addressing the challenges of dopant diffusion in silicon carbide.
Implementation Method 1
bonding first surface of a wide bandgap epitaxial layer on a first surface of a carrier substrate
Implementation Method 2
each implanted with dopants
Data Source
AI summary
Semiconductor device are provided. In one example, a semiconductor device includes a substrate. The semiconductor device includes a plurality of semiconductor layers on the substrate. The plurality of semiconductor layers are bonded to one another in a stacked arrangement.