Stacked Structure Transfer Using a Buried Weakened Plane
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Solution Overview
Problem
Existing methods for transferring thick membranes onto functionalized substrates in microelectronics face issues such as membrane degradation, non-uniform thickness, and difficulty in precise detachment, which can lead to cracks and peeling, especially when the substrate includes cavities or microelectronic components.
Innovation Solution
A process involving the formation of a buried weakened plane in a carrier or initial substrate through ion implantation, followed by controlled thinning and joining with a receiver substrate, allowing for the transfer of a surface film with high integrity and uniformity, using low-temperature heat treatments and chemical etching to separate along the weakened plane.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If mechanical and chemical thinning is used to transfer thick membranes, then the membrane can be transferred onto the substrate, but the quality of the membrane degrades and non-uniformities of thickness occur
Solution Approach 1:
The process segments the membrane transfer into distinct stages: first forming a weakened plane at a controlled depth, then thinning the substrate to expose this plane, and finally separating along it. This segmentation allows the membrane to be released without subjecting it to the degrading effects of direct mechanical and chemical thinning, thereby maintaining both thickness uniformity and membrane quality.
Solution Approach 2:
The weakened plane is formed in advance within the substrate at a predetermined depth before the membrane transfer operation. This preliminary action creates a pre-defined separation path that guides the subsequent release process, ensuring uniform membrane thickness and preventing quality degradation during transfer.
2Ease of manufacture
If detachment is achieved by inserting a blade or applying tensile stresses, then the membrane can be separated from the donor substrate, but the quality of the membrane is negatively affected
Solution Approach 1:
The invention replaces direct mechanical detachment methods (blade insertion, tensile stress application) with a chemically-assisted separation process. The weakened plane, created by ion implantation, allows the membrane to be released through controlled chemical etching or thermal treatment, which are gentler on the membrane quality while still achieving effective detachment.
3Ease of manufacture
If laser lift-off is used for separation, then the membrane can be detached from the substrate, but transparent substrates are required which limits applications
Solution Approach 1:
The invention changes the separation mechanism from laser-based (which requires optical transparency) to a method based on ion-implantation-induced weakened planes. By altering the physical-chemical parameters of the substrate through ion implantation, the separation can be achieved in opaque and colored substrates as well, greatly expanding material compatibility while maintaining ease of manufacture.
4Adaptability or versatility
If the functionalized substrate comprises cavities, then various functions can be integrated, but the membrane exhibits cracks and peeling regions
Solution Approach 1:
The weakened plane is formed in advance throughout the substrate, including in regions with cavities and integrated functions. This pre-established separation path ensures that when the membrane is released, it detaches uniformly even over complex substrate topographies, preventing cracks and peeling that would otherwise occur in cavity regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the transfer of thick, high-quality surface films with precise control over thickness and integrity, suitable for functionalized substrates with micro- or nanoelectronic components, reducing the risk of degradation and ensuring uniformity.
Implementation Method 1
forming a buried weakened plane in the carrier substrate or in the initial substrate, by implanting light ions through the front face of either of the substrates
Implementation Method 2
heat treatment at an appropriate temperature so as to cause separation along the buried weakened plane
Data Source
AI summary
A method for producing a stacked structure comprises: a) providing a carrier substrate and an initial substrate, each having a front face and a back face, b) forming a buried weakened plane in the carrier substrate or in the initial substrate, by implanting light ions through the front face of either of the substrates, c) joining the carrier substrate and the initial substrate via their respective front faces, d) thinning the initial substrate via its back face to form a donor substrate e) providing a receiver substrate having a front face and a back face, f) joining the donor substrate and the receiver substrate via their respective front faces, and g) separating along the buried weakened plane, so as to form the stacked structure comprising the receiver substrate and a surface film including all or part of a donor layer originating from the initial substrate.