Laser Modification Layering for Stacked Substrate Thinning
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Solution Overview
Problem
Existing methods for manufacturing stacked substrates, such as SOI substrates, face challenges in improving productivity and separation efficiency between semiconductor substrates and oxide layers, often requiring high energy consumption and generating radioactivity.
Innovation Solution
A method involving the formation of a bonding layer with an oxide layer on a semiconductor substrate, followed by bonding with a second substrate, and then using a laser to create a modification layer for controlled thinning and separation, reducing energy consumption and avoiding radioactivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods (hydrogen ion implantation or smart cut) are used to separate the oxide layer from the semiconductor substrate, then separation quality is improved, but energy consumption increases and radioactivity is generated
Solution Approach 1:
The patent replaces the conventional mechanical/chemical separation methods (hydrogen ion implantation and smart cut) with a laser-based separation method. The laser beam irradiates the interface between the oxide layer and semiconductor substrate, causing localized heating and separation without requiring high-energy ion implantation or radioactive materials, thus reducing energy consumption and eliminating radioactivity while maintaining separation quality
Solution Approach 2:
The laser beam induces localized phase transitions at the oxide-semiconductor interface through rapid heating and cooling cycles. This thermal phase transition enables clean separation of the oxide layer from the substrate without the need for high-energy processes, resolving the contradiction between separation quality and energy consumption
2Manufacturing precision
If conventional methods (hydrogen ion implantation or smart cut) are used to separate the oxide layer from the semiconductor substrate, then separation quality is improved, but device complexity increases due to radioactive shielding requirements
Solution Approach 1:
The patent eliminates the need for radioactive shielding structures by replacing ion implantation and smart cut methods with laser-based separation. The laser method generates no radioactivity, thereby simplifying the overall device structure and removing complex shielding requirements while maintaining effective separation quality
Solution Approach 2:
The patent extracts and removes the radioactive shielding component from the system entirely by adopting a non-radioactive laser separation method. This eliminates the harmful factor (radioactivity) and its associated complex shielding structures, simplifying the device while preserving separation functionality
3Manufacturing precision
If multiple sequential processes are used to form and separate layers, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The patent merges the oxide layer formation and separation processes into a more integrated workflow. The bonding layer is formed first, then the laser separation is performed in a subsequent step, reducing the number of discrete sequential operations compared to conventional methods while maintaining manufacturing precision
Solution Approach 2:
The patent performs preliminary actions by pre-forming the bonding layer with precise thickness control before the separation step. This preliminary preparation enables more efficient subsequent laser separation and reduces the need for multiple corrective or iterative processing steps, thereby improving productivity without sacrificing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances productivity and reduces production costs by minimizing energy use and eliminating the need for radioactive shielding, while improving the separation quality between the oxide layer and semiconductor substrate.
Implementation Method 1
forming, after the bonding of the first semiconductor substrate and the second semiconductor substrate, a modification layer with a laser beam on a first division plane
Implementation Method 2
thinning the first semiconductor substrate bonded to the second semiconductor substrate with the bonding layer therebetween by dividing the first semiconductor substrate starting from the modification layer formed at the first division plane
Data Source
AI summary
A stacked substrate manufacturing method includes (A) to (D) described below. (A) forming a bonding layer, which includes an oxide layer, on a surface of a first semiconductor substrate. (B) bringing the oxide layer of the bonding layer into contact with a second semiconductor substrate, and bonding the first semiconductor substrate and the second semiconductor substrate with the bonding layer therebetween. (C) forming, after the bonding of the first semiconductor substrate and the second semiconductor substrate, a modification layer with a laser beam on a first division plane along which the first semiconductor substrate is to be divided in a thickness direction thereof. (D) thinning the first semiconductor substrate bonded to the second semiconductor substrate with the bonding layer therebetween by dividing the first semiconductor substrate starting from the modification layer formed at the first division plane.