Stacked Terahertz Element Layout for Higher Radiation Efficiency
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The development of devices operating in the terahertz band for applications such as high-capacity communication and imaging has been hindered by the lack of efficient and effective terahertz elements and semiconductor devices that can harness the quantum effects in this frequency range.
Innovation Solution
A terahertz element is designed with a semiconductor substrate, insulated first and second conductive layers, and an active element, featuring specific capacitor and antenna parts, along with an insulating layer and wire bonding configuration to enhance radiation efficiency and reduce interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional semiconductor devices are miniaturized to nano-scale, then device integration density increases, but quantum effects become dominant and hinder terahertz band operation
Solution Approach 1:
The patent transitions from planar 2D device architecture to a three-dimensional stacked configuration where capacitor parts are positioned at different heights above the semiconductor substrate. This vertical dimensionality allows the device to operate in the terahertz band by creating appropriate resonant cavities and electromagnetic field distributions that were not achievable with conventional flat layouts, thus resolving the contradiction between miniaturization and terahertz operation capability.
2Area of stationary object
If capacitor parts are positioned close to the semiconductor substrate, then device area is reduced, but interference with the substrate increases
Solution Approach 1:
The capacitor parts are arranged in a stacked configuration at different vertical levels above the semiconductor substrate rather than being placed side-by-side in the same plane. This vertical separation in the third dimension reduces the horizontal footprint (device area) while simultaneously increasing the distance between capacitor parts and the substrate, thereby reducing electromagnetic interference with the substrate.
Solution Approach 2:
Insulating layers are introduced as intermediary structures between the capacitor parts and the semiconductor substrate. These insulating layers act as mediators that electrically isolate the capacitor parts from the substrate, reducing harmful electromagnetic interference while allowing the capacitor parts to be positioned in optimized locations for compact device design.
3Loss of energy
If conductive layers are stacked vertically, then radiation efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent employs vertical stacking of conductive layers and capacitor parts in the thickness direction to create resonant structures that enhance radiation efficiency in the terahertz band. This three-dimensional arrangement establishes appropriate electromagnetic field distributions and resonant frequencies that improve energy radiation, while the systematic layer-by-layer fabrication approach aims to manage manufacturing complexity through standardized semiconductor processing techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration improves the radiation efficiency and reduces interference, enabling effective operation in the terahertz band for applications like high-capacity communication and imaging.
Implementation Method 1
a first capacitor part, positioned offset from the active element in a second direction as viewed in a thickness direction of the semiconductor substrate
Implementation Method 2
a first antenna part extending along a first direction
Data Source
AI summary
A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.