Semiconductor device

Solution Overview

Problem

Existing semiconductor devices face challenges in achieving high integration density and reliability, particularly in the formation of contacts between upper and lower source/drain patterns, which can lead to deterioration and inefficiencies in the patterning process.

Innovation Solution

A semiconductor device design featuring a through contact that extends through the upper source/drain pattern and is electrically connected to both the upper and lower source/drain patterns, with specific partial growth portions and etch stop films to enhance connectivity and reduce the risk of deterioration, while simplifying the patterning process by selectively removing certain portions of the upper source/drain patterns.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional contact formation methods are used between upper and lower source/drain patterns, then the manufacturing process is simpler, but the integration density and reliability deteriorate

Engineering Contradiction:

Improvecontact formation reliabilityVSAvoidpatterning process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The upper source/drain pattern is formed with predetermined partial growth portions that protrude toward the through contact region before the through contact is formed. This preliminary action ensures that when the through contact is subsequently formed, there is already optimized geometric alignment and reduced risk of contact failure, thereby improving reliability without adding complex post-processing steps

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The upper source/drain pattern is designed with non-uniform thickness, featuring partial growth portions in specific regions where through contacts will be formed. This local quality enhancement creates favorable geometric conditions for contact formation in critical areas while maintaining standard design elsewhere, improving reliability at contact points without increasing overall device complexity

Inventive Principle:

Principle #3Local quality

2Reliability

If integration density is increased, then device functionality improves, but the risk of deterioration in contact formation increases

Engineering Contradiction:

Improvecontact formation stabilityVSAvoiddevice area

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The geometry of the upper source/drain pattern is modified by changing the thickness parameter in specific regions to create partial growth portions. These protruding portions improve the geometric conditions for through contact formation, ensuring stable contact formation even as device area is reduced for higher integration density

Inventive Principle:

Principle #35Parameter changes

3Reliability

If standard upper source/drain patterns are used without partial growth portions, then the manufacturing process is simpler, but contact formation reliability deteriorates

Engineering Contradiction:

Improvecontact formation reliabilityVSAvoidpatterning process ease

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The upper source/drain pattern is formed with predetermined partial growth portions that protrude toward the through contact region before the through contact is formed. This preliminary action ensures that when the through contact is subsequently formed, there is already optimized geometric alignment and reduced risk of contact failure, thereby improving reliability without adding complex post-processing steps

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The upper source/drain pattern is designed with non-uniform thickness, featuring partial growth portions in specific regions where through contacts will be formed. This local quality enhancement creates favorable geometric conditions for contact formation in critical areas while maintaining standard design elsewhere, improving reliability at contact points without increasing overall device complexity

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS20260047198A1Semiconductor device

Publication Date: 2026.02.12 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device may include a lower active pattern extending in a first direction and including a lower channel pattern, and a lower source/drain pattern on a side of the lower channel pattern. The semiconductor device may further include an upper active pattern spaced apart from the lower active pattern in a second direction and including an upper channel pattern, and an upper source/drain pattern on a side of the upper channel pattern. The semiconductor device may further include a first intermediate insulating film between the lower source/drain pattern and the upper source/drain pattern; a through contact extending through the upper source/drain pattern and the first intermediate insulating film in the second direction and electrically connected to the upper source/drain pattern and the lower source/drain pattern; and an upper etch stop film in contact with a portion of a side surface of the through contact.