Stacked Semiconductor Through Electrodes with Buried Air Gaps

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Solution Overview

Problem

Existing stacked type semiconductor devices face challenges in maintaining the stability of bonding structures between semiconductor chips due to thermal expansion and repulsive forces during the bonding process, which affects the reliability and efficiency of data transmission.

Innovation Solution

The introduction of through electrodes with buried empty gaps, specifically air-gaps, that are bonded directly without a medium, allowing for electrical connection and mitigating the repulsive forces through the buffering action of these gaps during the bonding process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If through electrodes are used to connect stacked semiconductor chips, then data transmission speed is improved, but bonding structure stability deteriorates due to thermal expansion and repulsive forces

Engineering Contradiction:

Improvedata transmission speedVSAvoidbonding structure stability

Core Design Contradiction:

SpeedVSReliability

Solution Approach 1:

The patent introduces empty gaps within the through electrodes before the bonding process occurs. These pre-formed gaps act as cushioning spaces that can absorb thermal expansion and repulsive forces during bonding, preventing damage to the bonding structure while maintaining the electrical connection function for high-speed data transmission

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

2Strength

If through electrodes are filled completely with bonding material, then bonding strength is improved, but thermal expansion stress increases affecting reliability

Engineering Contradiction:

Improvebonding strengthVSAvoidthermal expansion stability

Core Design Contradiction:

StrengthVSReliability

Solution Approach 1:

The patent applies local quality by creating non-uniform structure within the through electrode - empty gaps are strategically positioned at specific locations within the through electrode rather than uniform filling. This localized empty space distribution provides stress relief zones exactly where thermal expansion occurs most intensely, while maintaining bonding strength in other regions

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the stability of the bonding structure between semiconductor chips, improving data transmission efficiency and reliability by canceling out repulsive forces generated during thermal expansion.

Implementation Method 1

canceling out repulsive forces generated during thermal expansion

Methodology Applied

Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS11244928B2Stacked type semiconductor device including through electrode

Publication Date: 2022.02.08 SK HYNIX INC

AI summary

There are provided a stacked type semiconductor device and a manufacturing method of the stacked type semiconductor device. The stacked type semiconductor device includes: semiconductor chips stacked to overlap with each other; through electrodes respectively penetrating the semiconductor chips, the through electrodes being bonded to each other; and empty gaps respectively buried in the through electrodes.