Stacked Transistor Diode Path for Plasma Charge Discharge
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Solution Overview
Problem
Existing integrated circuit devices with stacked transistors face challenges in secure isolation between stacked elements and efficient discharge of plasma-induced charges, which can lead to potential breakdown of gate dielectric layers.
Innovation Solution
The integration of a discharging path with a diode structure between the gate electrode of the upper transistor structure and the second substrate, allowing for efficient discharge of charges and enhancing isolation between stacked transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If stacked transistor structures are used to increase integration density, then device functionality and compactness are improved, but charge accumulation from plasma exposure can lead to gate dielectric breakdown
Solution Approach 1:
A diode structure is introduced as an intermediary charge discharge path between the gate electrode and substrate. This diode acts as a mediator that safely conducts plasma-induced charges away from the gate dielectric, preventing charge accumulation while maintaining the compact stacked transistor architecture.
Solution Approach 2:
The discharging path is pre-configured into the stacked transistor structure before plasma exposure occurs. By establishing the charge discharge pathway in advance, the structure is prepared to handle plasma-induced charges immediately upon exposure, preventing gate dielectric breakdown before it can occur.
2Reliability
If isolation layers are added between stacked transistor elements to improve isolation, then element separation is enhanced, but device complexity and manufacturing steps increase
Solution Approach 1:
The diode structure serves multiple functions simultaneously: it provides charge discharge capability, acts as an isolation element between stacked transistor elements, and maintains structural integrity. By combining charge management and isolation functions into a single structure, the need for separate isolation layers is reduced, simplifying the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents the accumulation of plasma-induced charges, thereby improving the reliability and performance of integrated circuit devices by reducing the risk of gate dielectric breakdown.
Implementation Method 1
a discharging path between a gate electrode of the second transistor structure and the second substrate, the discharging path including a diode structure on the first substrate
Data Source
AI summary
Integrated circuit devices and methods of forming the same. As an example, an integrated circuit device may include a first substrate; a first transistor structure on the substrate; a second transistor structure stacked in a vertical direction on the first transistor structure; an isolation layer between the first transistor structure and the second transistor structure in the vertical direction; a diode structure on the first substrate and adjacent to the first transistor structure in a horizontal direction; and a second substrate on the second transistor structure in the vertical direction. The diode structure may be part of a discharging path between a gate electrode of the second transistor structure and the second substrate. The discharging path may extend through the isolation layer.