Stacked Transistor Discharge Path Through Isolation Layer
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Solution Overview
Problem
In three-dimensional integrated circuit devices with stacked transistors, there is a challenge in providing secure isolation between elements while ensuring that plasma-induced charges can effectively discharge to prevent potential breakdown of gate dielectric layers.
Innovation Solution
The integration of a diode structure as part of a discharging path between the gate electrode of the upper transistor structure and the substrate, which extends through an isolation layer, facilitates the discharge of accumulated charges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an isolation layer is introduced between stacked transistor structures to ensure secure isolation, then isolation effectiveness is improved, but charge discharge capability deteriorates
Solution Approach 1:
The isolation layer is segmented by forming a through-isolation layer extending from the first surface to the second surface of the substrate, creating distinct isolation regions that allow charge discharge while maintaining electrical isolation between adjacent transistor structures
Solution Approach 2:
The through-isolation layer acts as an intermediary structure that enables charge discharge from the upper transistor structure to the substrate while maintaining the isolation function, serving as a mediator between the conflicting requirements of isolation and charge discharge
2Reliability
If the isolation layer is made continuous to maintain strong isolation, then isolation effectiveness is improved, but charge discharge path is blocked
Solution Approach 1:
The continuous isolation layer is segmented by introducing a through-isolation layer that creates a controlled discontinuity, allowing charge discharge while maintaining isolation in other regions
Solution Approach 2:
Instead of making the isolation layer completely continuous or completely discontinuous, the invention inverts the approach by creating a through-isolation layer that is discontinuous in the vertical direction but maintains horizontal isolation, reversing the conventional thinking about isolation layer continuity
Data Source
AI summary
Integrated circuit devices and methods of forming the same. As an example, an integrated circuit device may include a substrate; a first transistor structure on the substrate; a second transistor structure stacked in a vertical direction on the first transistor structure; an isolation layer between the first transistor structure and the second transistor structure in the vertical direction; and a diode structure on the substrate and adjacent to the first transistor structure in a horizontal direction. The diode structure may be part of a discharging path between a gate electrode of the second transistor structure and the substrate. The discharging path may extend through the isolation layer.