Stacked Transistor Gate Structures With Independent Width Tuning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The complexity of manufacturing integrated circuit devices with stacked transistors makes it challenging to achieve optimal performance due to the complexity of the manufacturing process and the need for precise dimensions and materials in gate structures.
Innovation Solution
The solution involves forming integrated circuit devices with stacked transistors, where the lower and upper gate structures are created through separate processes, allowing for independent adjustment of dimensions and materials, enabling different gate electrode materials and dimensions to achieve desirable performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If stacked transistor structures are used to reduce area, then area is reduced to close to one-half, but manufacturing process complexity increases and becomes challenging
Solution Approach 1:
The gate structure is segmented into multiple independent gate electrodes (first gate electrode, second gate electrode, third gate electrode) that can be formed through separate manufacturing processes. This segmentation allows each gate to be optimized independently while maintaining the stacked transistor configuration, thereby reducing area without proportionally increasing manufacturing complexity.
Solution Approach 2:
Different gate electrodes are assigned different materials and dimensions according to the specific requirements of upper and lower transistors. The first gate electrode has different properties than the second and third gate electrodes, allowing local optimization of transistor performance while simplifying the overall manufacturing process through targeted material selection.
2Ease of manufacture
If gate structures are formed through separate processes allowing independent adjustment, then manufacturing is simplified and performance is enhanced, but device structure becomes more complex with different dimensions and materials
Solution Approach 1:
The gate structure design provides multi-functionality by accommodating different materials (conductive material, metal material, polysilicon material) and dimensions for different gate electrodes within a unified stacked transistor architecture. This universal structure can be applied to various transistor types and performance requirements without fundamentally changing the manufacturing approach.
Data Source
AI summary
Integrated circuit devices may include a lower transistor and an upper transistor stacked on a substrate, and the upper transistor may overlap the lower transistor. The upper transistor may include an upper gate structure, and the lower transistor may include a lower gate structure, and the upper gate structure and the lower gate structure may have different widths in a horizontal direction.