Stacked Transistor Layout With Shifted Channels for Area Scaling
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Solution Overview
Problem
Existing semiconductor technologies face challenges in integrating connections for stacked transistor structures, particularly in achieving efficient area utilization and reducing the size of structural features while maintaining effective control over channel regions.
Innovation Solution
The development of stacked transistor structures with aligned cell boundaries and shifted channels, allowing for horizontally offset channels and integrated connections within these boundaries, including merged gate contacts and asymmetric power rails, facilitates efficient area usage and improved connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If stacked transistor structures are used to reduce area footprint, then area utilization is improved, but integration of connections and routing becomes more complex
Solution Approach 1:
The patent transitions from planar 2D transistor layouts to 3D stacked transistor structures, utilizing the vertical dimension to stack multiple transistor layers. This dimensional change allows multiple transistors to occupy the same horizontal footprint while being separated vertically, thereby reducing area consumption while maintaining electrical connection integrity through carefully designed vertical and lateral routing paths.
Solution Approach 2:
The patent segments the transistor structure into multiple independent layers stacked vertically, with each layer containing complete transistor devices. This segmentation allows independent optimization of each layer's routing and connections while reducing the overall horizontal area requirement. The segmented structure enables complex connections to be distributed across multiple layers rather than congested in a single plane.
2Area of stationary object
If channel regions are shifted horizontally within aligned cell boundaries, then area utilization is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent introduces asymmetric channel positioning within aligned cell boundaries, where channels in different stacked layers are horizontally offset from each other. This asymmetric arrangement allows more efficient packing and utilization of the cell boundary area. The asymmetric design is implemented with precise control through advanced lithography and alignment techniques, transforming a potential precision challenge into an area optimization solution.
3Productivity
If further miniaturization is pursued to increase performance, then device performance is improved, but control over channel regions becomes more difficult
Solution Approach 1:
By stacking transistor layers vertically, the patent achieves further miniaturization in the horizontal plane while maintaining effective channel control through the vertical dimension. The gate structures extend vertically to control channels in multiple layers, providing enhanced control authority. This 3D configuration allows continued scaling of horizontal dimensions to improve performance while the vertical gate control mechanism compensates for the increased difficulty of controlling smaller channel regions.
Data Source
AI summary
A semiconductor structure includes a first transistor and a second transistor vertically stacked over the first transistor. The first transistor and the second transistor have horizontally aligned cell boundaries. A first set of one or more channels of the first transistor are horizontally offset from a second set of one or more channels of the second transistor within the horizontally aligned cell boundaries.