Stacked Transistors with Inter-Strata Dielectric for Fringe Capacitance Reduction
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Solution Overview
Problem
Conventional integrated circuit devices face challenges in reducing fringe capacitance between gate metal and source/drain materials, which affects transistor speed and power consumption due to the lack of efficient dielectric materials between stacked transistors.
Innovation Solution
The integration of a dielectric material between channel materials of adjacent strata in stacked transistors, surrounded by a gate dielectric, reduces fringe capacitance by minimizing the gate metal presence between channel materials, thereby enhancing transistor speed and reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If gate metal is present between channel materials of adjacent strata, then electrical connection is facilitated, but fringe capacitance increases reducing transistor speed
Solution Approach 1:
A dielectric material is introduced as an intermediary between the gate metal and channel materials of adjacent strata. This dielectric layer acts as a mediator that reduces the harmful fringe capacitance effect while allowing the gate metal to maintain its electrical connection function. The dielectric material is positioned to minimize gate metal exposure between channels without completely isolating the gate structures.
Solution Approach 2:
The dielectric material is selectively positioned in specific locations where fringe capacitance occurs between gate metal and adjacent channel materials. Rather than uniformly insulating all gate structures, the dielectric is applied locally to the regions where harmful capacitance arises, preserving electrical connection functionality while mitigating speed-reducing effects.
2Speed
If dielectric material is added between channel materials, then fringe capacitance is reduced, but device complexity increases
Solution Approach 1:
The dielectric material serves multiple functions simultaneously: it reduces fringe capacitance between adjacent strata, provides electrical isolation where needed, and maintains compatibility with existing gate metal structures. This multi-functionality allows a single material addition to address multiple issues without proportionally increasing device complexity.
Solution Approach 2:
The dielectric material is nested within the existing transistor structure, specifically positioned between the gate metal and adjacent channel materials. This nested configuration integrates the dielectric into the existing device architecture rather than adding external components, thereby minimizing the increase in overall device complexity while achieving the desired capacitance reduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the operational speed of transistors and decreases power consumption by mitigating fringe capacitance, leading to more efficient integrated circuit performance.
Implementation Method 1
reducing fringe capacitance between gate metal and source/drain materials
Implementation Method 2
a dielectric material is between channel materials of adjacent strata, and the dielectric material is surrounded by a gate dielectric
Data Source
AI summary
Disclosed herein are stacked transistors with dielectric between channel materials, as well as related methods and devices. In some embodiments, an integrated circuit structure may include stacked strata of transistors, wherein a dielectric material is between channel materials of adjacent strata, and the dielectric material is surrounded by a gate dielectric.