Stacked Semiconductor TSV Anti-Fuse Structure for Higher Memory Density
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving increased memory capacity and improved mounting density while maintaining efficient integration and functionality, particularly in stacked package configurations.
Innovation Solution
Incorporation of a through-silicon-via (TSV) structure with a dielectric layer sandwiched between conductive layers, functioning as an anti-fuse structure, within a semiconductor stacked package.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a conventional TSV structure with only conductive layers is used, then electrical connection is achieved, but memory functionality and storage capacity cannot be implemented
Solution Approach 1:
The TSV structure is designed to serve multiple functions: electrical connection through conductive layers and memory storage through the dielectric layer that can be programmed as anti-fuse elements. This multi-functionality allows the same structure to provide both interconnect and memory capabilities, increasing memory capacity without adding separate structures
Solution Approach 2:
The TSV structure employs composite materials including conductive layers (such as copper or tungsten) and dielectric layers (such as silicon oxide or silicon nitride). This composite construction enables the structure to exhibit both electrical conductivity for connection and dielectric properties for memory functionality, resolving the contradiction between connection capability and memory capability
2Area of stationary object
If chip size is reduced to increase mounting density, then mounting area utilization improves, but integration complexity and manufacturing difficulty increase
Solution Approach 1:
The patent transitions from planar 2D chip layout to vertical 3D stacked architecture. By stacking multiple chips vertically with TSV structures providing through-silicon interconnects, the design achieves higher mounting density and memory capacity without reducing individual chip size, thereby maintaining manufacturing precision while improving area utilization
3Quantity of substance
If the dielectric layer is made thinner to increase storage capacity, then memory density improves, but structural stability and reliability deteriorate
Solution Approach 1:
The patent optimizes dielectric layer parameters including thickness, material composition (such as silicon oxide or silicon nitride), and doping concentration to achieve the desired balance between memory density and reliability. By carefully controlling these parameters, the dielectric layer can be made thin enough for high density while maintaining sufficient mechanical strength and electrical stability for reliable operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances memory capacity and mounting density, enabling efficient data storage and retrieval through the TSV structure's functionality as an anti-fuse, suitable for memory applications.
Implementation Method 1
forming the dielectric layer comprises depositing a dielectric material lining the via hole
Implementation Method 2
forming the dielectric layer comprises oxidizing an exposed surface of the first conductive layer through the via hole
Data Source
AI summary
The semiconductor stacked package including a semiconductor die. The semiconductor die includes a substrate, a transistor, and a through-silicon-via (TSV) structure. The transistor is over the substrate. The TSV structure penetrates the substrate and comprises a first conductive layer, a second conductive layer, and a dielectric layer. The dielectric layer is between the first conductive layer and the second conductive layer. The method of manufacturing the same includes the following steps: forming a via hole in a substrate; forming a first conductive layer in the via hole; forming a dielectric layer in the via hole and over the first conductive layer; forming a second conductive layer in the via hole and over the dielectric layer; and forming a transistor over the substrate. The first conductive layer, the dielectric layer, and the second conductive layer collectively form a through-silicon-via (TSV) structure.