Stacked Electromagnetic Wave Attenuator for Low-Frequency Shielding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing electromagnetic wave attenuators struggle to provide stable and effective attenuation, particularly in low frequency regions, and there is a need for improved electromagnetic wave shielding in electronic devices.
Innovation Solution
A stacked structure comprising alternating layers of magnetic and non-magnetic materials, including Cr and Ti, with specific thicknesses and crystal/amorphous configurations, enhances electromagnetic wave attenuation by promoting strong magnetostatic coupling and exchange coupling interactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electromagnetic wave attenuators are used, then electromagnetic wave shielding is provided, but stable attenuation particularly in low frequency regions cannot be achieved
Solution Approach 1:
The patent employs a composite stacked structure consisting of alternating magnetic layers (Fe, Ni, Co or their alloys) and non-magnetic layers (Cr, Ti, Cu, Al, or their alloys). This composite material approach creates strong magnetostatic coupling and exchange coupling interactions between adjacent magnetic layers, achieving stable electromagnetic wave attenuation across wide frequency ranges including low frequency regions where conventional attenuators fail.
Solution Approach 2:
The attenuator is divided into multiple thin magnetic layers (each 1-100 nm thick) separated by non-magnetic spacer layers. This segmentation into ultra-thin alternating layers increases the surface area for magnetic interaction and enhances coupling effects, enabling effective low-frequency attenuation while maintaining overall structure stability and reliability.
2Object-affected harmful factors
If electromagnetic wave attenuation is enhanced, then shielding effectiveness is improved, but device complexity increases
Solution Approach 1:
The patent optimizes specific parameters including magnetic layer thickness (1-100 nm), non-magnetic layer thickness (0.1-10 nm), and the number of alternating pairs to achieve resonance frequencies that enhance low-frequency attenuation. By carefully controlling these dimensional parameters, the complex stacked structure achieves superior shielding effectiveness without requiring excessive layer numbers or thicknesses.
Solution Approach 2:
Different magnetic and non-magnetic materials are selectively chosen for specific layers based on their local functional requirements. Magnetic layers use materials with specific permeability characteristics while non-magnetic layers are selected for their spacing and decoupling properties, creating localized optimal conditions for magnetostatic coupling and overall attenuation performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure achieves enhanced electromagnetic wave attenuation across a wide frequency range, particularly in low frequency regions, effectively shielding electronic devices from electromagnetic interference.
Implementation Method 1
enhances electromagnetic wave attenuation by promoting strong magnetostatic coupling and exchange coupling interactions
Implementation Method 2
enhances electromagnetic wave attenuation by promoting strong magnetostatic coupling and exchange coupling interactions
Implementation Method 3
The one of the first non-magnetic layers includes an amorphous region. The one of the plurality of first magnetic layers and the other one of the plurality of first magnetic layers include a crystal region.
Data Source
AI summary
According to one embodiment, an electromagnetic wave attenuator includes a stacked member including a first planar portion. The first planar portion includes a first stacked body. The first stacked body includes a plurality of non-magnetic layers including Cr and Ti, and a plurality of first magnetic layers. A direction from one of the first magnetic layers to an other one of the first magnetic layers is along a first direction. One of the non-magnetic layers is between the one of the first magnetic layers and the other one of the first magnetic layers. The one of the first non-magnetic layers includes an amorphous region. The one of the first magnetic layers and the other one of the first magnetic layers include a crystal region.


