Stacked N-Type Waveguide Structure for Higher Light Emission

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Solution Overview

Problem

Existing light emitting semiconductor structures have relatively low light emitting efficiency.

Innovation Solution

A semiconductor structure is designed with a stacked N-type waveguide layer configuration, where the conduction band levels of the first and second N-type waveguide layers are the same, and the valence band level of the first layer is lower than that of the second, facilitating better electron conduction and suppressing hole leakage, thereby enhancing light emitting efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional single-layer N-type waveguide structure is used, then the device complexity is low, but the light emitting efficiency is insufficient

Engineering Contradiction:

Improvelight emitting efficiencyVSAvoidwaveguide structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The N-type waveguide structure is divided into multiple layers (first N-type waveguide layer and second N-type waveguide layer) with different band structures. Each layer has specific conduction band and valence band levels designed to optimize carrier transport, separating the functions of electron conduction and hole blocking into distinct structural components.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the waveguide structure are assigned different band characteristics. The first N-type waveguide layer has a conduction band level aligned with the active layer for efficient electron supply, while the second N-type waveguide layer has a higher valence band level to block hole leakage, creating localized functional zones within the waveguide.

Inventive Principle:

Principle #3Local quality

2Reliability

If the conduction band level of the first N-type waveguide layer is aligned with the active layer, then electron conduction is improved, but hole leakage may increase

Engineering Contradiction:

Improveelectron conduction efficiencyVSAvoidhole leakage

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The waveguide is segmented into two layers with different band alignments. The first layer provides electron conduction pathways aligned with the active layer, while the second layer introduces a valence band offset to prevent hole leakage, dividing the carrier management functions across separate structural elements.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The band energy levels are precisely controlled with specific parameters: the conduction band level of the first N-type waveguide layer is aligned with the active layer (difference within 0.05 eV) to facilitate electron injection, while the valence band level of the second layer is raised (difference of 0.1-0.5 eV) to block holes, optimizing both electron supply and hole containment through parameter optimization.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The structure improves electron conduction and reduces hole leakage, resulting in enhanced light emitting efficiency, particularly for emission wavelengths between 700 nm to 850 nm.

Implementation Method 1

a conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer, and a valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer

Methodology Applied

Scientific EffectBand alignment:

Implementation Method 2

facilitating better electron conduction and suppressing hole leakage

Methodology Applied

Scientific EffectElectron conduction: Conduction (electrical)

Implementation Method 3

suppressing hole leakage

Methodology Applied

Scientific EffectHole blocking:

Data Source

PatentUS12483005B2Semiconductor structure and method for manufacturing same

Publication Date: 2025.11.25 SUZHOU EVERBRIGHT PHOTONICS CO LTD

AI summary

A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a semiconductor substrate layer; an N-type waveguide structure arranged on the semiconductor substrate layer; and an active layer arranged on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer. The N-type waveguide structure includes a first N-type waveguide layer and a second N-type waveguide layer that are stacked. The second N-type waveguide layer is arranged between the first N-type waveguide layer and the active layer. A conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer. A valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer. The semiconductor structure increases light emitting efficiency.